Parasitic structure
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In asemiconductor device,aparasitic structureis a portion of the device that resembles in structure some other, simpler semiconductor device, and causes the device to enter an unintended mode of operation when subjected to conditions outside of its normal range.[citation needed]For example, the internal structure of an NPNbipolar transistorresembles twoP-Njunctiondiodesconnected together by a commonanode.In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode. If a sufficientforward biasis placed on this junction it will form a parasitic diode structure, and current will flow from base to collector.
A common parasitic structure is that of asilicon controlled rectifier(SCR). Once triggered, an SCRconductsfor as long as there is a current, necessitating a complete power-down to reset the behavior of the device. This condition is known aslatchup.[citation needed]
References
[edit]- Panagopoulos, A. D. (2015).Handbook of Research on Next Generation Mobile Communication Systems.Advances in Wireless Technologies and Telecommunication. IGI Global. pp. 57–58.ISBN978-1-4666-8733-2.
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