LDMOS
LDMOS(laterally-diffused metal-oxide semiconductor)[1]is a planar double-diffusedMOSFET(metal–oxide–semiconductor field-effect transistor) used inamplifiers,includingmicrowave poweramplifiers,RF power amplifiersandaudio power amplifiers.These transistors are often fabricated on p/p+silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1]As an example, the drift region of thispower MOSFETis fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.
Thesilicon-based RF LDMOS (radio-frequencyLDMOS) is the most widely used RF power amplifier inmobile networks,[2][3][4]enabling the majority of the world'scellular voiceanddata traffic.[5]LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to sourcebreakdown voltageusually above 60volts.[6]Compared to other devices such asGaAsFETs they show a lower maximum power gain frequency.
Manufacturers of LDMOS devices and foundries offering LDMOS technologies include,Tower Semiconductor,TSMC,LFoundry,SAMSUNG,GLOBALFOUNDRIES,Vanguard International Semiconductor Corporation,STMicroelectronics,Infineon Technologies,RFMD,NXP Semiconductors(including formerFreescale Semiconductor),SMIC,MK Semiconductors, Polyfet andAmpleon.
Photo Gallery[edit]
Various RF LDMOS transistors
-
BLF2045 silicon die. RF LDMOS 26 V 180 mA 2 GHz 10 dB 30 W SOT467C. Designed for broadband operation (1800 to 2200 MHz). -
BLF861A RF LDMOS transistor. RF LDMOS transistor 860 MHz 150W. -
BLF861A silicon die. RF LDMOS transistor 860 MHz 150W. Designed for UHF operation.
Applications[edit]
Common applications of LDMOS technology include the following.
- Amplifiers—RF power amplifiers,[2][3]audio power amplifiers,[7]class AB[4]
- Audio technology—loudspeakers,high-fidelity(hi-fi) equipment,public announcement(PA) systems[7]
- Mobile devices—mobile phones[3]
- Pulseapplications[4]
- Radio-frequency(RF) technology —RF engineering(RF engineering),RF power amplifiers[2][3][8]
- Wirelesstechnology —wireless networksanddigital networks[2][3]
RF LDMOS[edit]
Common applications of RF LDMOS technology include the following.
- Aerospaceanddefense technology[5]—military applications[9]
- Alarmandsecurity—security alarm[14]
- Avionics[15][10]—ADS-Btransponders,identification friend or foe(IFF) transponders,secondary surveillance radar(SSR),distance measuring equipment(DME),Mode Sedge-localized mode(ELM),tactical data link(TDL),[10]airband[16]
- Consumer electronics[14]
- Data logging[17]
- Equipmentcondition monitoring(CM)[17]
- Fire detection[17]
- Gas detection—carbon monoxide detector(CO detector),methanedetection[17]
- Industrial, Scientific and Medical band(ISM band) applications[15][4]—particle accelerators,[18][19]welding,[19]continuous wave(CW) applications,linearapplications,[20]pulseapplications[10][9][20]
- Lasertechnology — laser drivers,[18]carbon dioxide laser(CO2laser)[21]
- Radiotechnology —commercial radio,public safetyradio,marine radio,[13]amateur radio,[21]portable radio,[17]wideband,[22]narrowband[23]
- Millimeter-wave(mmW) technology[24]
- Mobile radio[15][25]—professional mobile radio,handheldtransistor radio,analog radio,digital radio,[25]digital mobile radio(DMR),[26]land mobile radio system(LMRS),[16]private mobile radio(PMR),[17]Terrestrial Trunked Radio(TETRA)[25][19]
- Radartechnology[15][4]—L band,[11][9]S band[11][23]
- Radio-frequency(RF) technology —radio-frequency identification(RFID)[13]RFplasmagenerator[18]
- RF energytechnology[27][5][28]—lighting,medical technology,drying,automotive electronics[28]
- Heating—electric heating,[21]RF heating,[18][5]microwave heating[28]
- Kitchen appliances—smart appliances,[5]countertopappliances,cooking appliances,[29]RFcooking,[27][18][5]microwave cooking,[4]RFdefrosting,[18][5][29]frozen fooddefrosting,freezers,refrigerators,ovens[29]
- Smart lighting— RF lighting andwireless light switch[4]
- Telecommunications[15]
- Broadband[14]—mobile broadband[25]
- Broadcasting—ultra high frequency(UHF) broadcasting,[14]FM broadcasting[18][4][21]
- Cellular networks[30][5]—2G,3G,[2]International Mobile Telecommunications-2000(IMT),[22]Long-Term Evolution(LTE),[31]4G,[3][5]5G,[3][5][31]5G New Radio(5G NR)[32][33]
- High frequency(HF) communication —very high frequency(VHF),[18][4]ultra high frequency(UHF)[13][4]
- Cellular voiceanddata traffic[5]
- Television(TV)[18]— VHF TV,[21]UHF TV,digital TV(DTV),TV transmitterequipment[14]
- Widebandandmobile communications[13]—base stations,[13][4][19]emergency position-indicating radiobeacon station(EPIRB),sonar buoys,automatic meter reading(AMR)[13]
- Wirelesstechnology —mobile communication,satellite communication,[15]wireless datamodems,[13]WiMAX[4]
- Voltage standing wave ratio(VSWR) applications[34][21]—plasma etchingandsynchrotrons[21]
See also[edit]
References[edit]
- ^abA. Elhami Khorasani, IEEE Electron Dev. Lett., vol. 35, pp. 1079-1081, 2014
- ^abcdeBaliga, Bantval Jayant(2005).Silicon RF Power MOSFETS.World Scientific.pp. 1–2.ISBN9789812561213.
- ^abcdefghAsif, Saad (2018).5G Mobile Communications: Concepts and Technologies.CRC Press.p. 134.ISBN9780429881343.
- ^abcdefghijklTheeuwen, S. J. C. H.; Qureshi, J. H. (June 2012)."LDMOS Technology for RF Power Amplifiers"(PDF).IEEE Transactions on Microwave Theory and Techniques.60(6): 1755–1763.Bibcode:2012ITMTT..60.1755T.doi:10.1109/TMTT.2012.2193141.ISSN1557-9670.S2CID7695809.
- ^abcdefghijk"LDMOS Products and Solutions".NXP Semiconductors.Retrieved4 December2019.
- ^van Rijs, F. (2008). "Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications".Radio and Wireless Symposium, 2008 IEEE.Orlando, FL. pp. 69–72.doi:10.1109/RWS.2008.4463430.
- ^abDuncan, Ben (1996).High Performance Audio Power Amplifiers.Elsevier.pp.177-8, 406.ISBN9780080508047.
- ^"A 600W broadband HF amplifier using affordable LDMOS devices".QRPblog.2019-10-27.Retrieved2022-09-28.
- ^abc"L-Band Radar".NXP Semiconductors.Retrieved9 December2019.
- ^abcd"Avionics".NXP Semiconductors.Retrieved9 December2019.
- ^abc"RF Aerospace and Defense".NXP Semiconductors.Retrieved7 December2019.
- ^ab"Communications and Electronic Warfare".NXP Semiconductors.Retrieved9 December2019.
- ^abcdefgh"Mobile & Wideband Comms".ST Microelectronics.Retrieved4 December2019.
- ^abcdef"470-860 MHz – UHF Broadcast".NXP Semiconductors.Retrieved12 December2019.
- ^abcdef"RF LDMOS Transistors".ST Microelectronics.Retrieved2 December2019.
- ^ab"28/32V LDMOS: IDDE technology boost efficiency & robustness"(PDF).ST Microelectronics.Retrieved23 December2019.
- ^abcdef"AN2048: Application note – PD54008L-E: 8 W - 7 V LDMOS in PowerFLAT packages for wireless meter reading applications"(PDF).ST Microelectronics.Retrieved23 December2019.
- ^abcdefghijk"ISM & Broadcast".ST Microelectronics.Retrieved3 December2019.
- ^abcd"700-1300 MHz – ISM".NXP Semiconductors.Retrieved12 December2019.
- ^ab"2450 MHz – ISM".NXP Semiconductors.Retrieved12 December2019.
- ^abcdefgh"1-600 MHz – Broadcast and ISM".NXP Semiconductors.Retrieved12 December2019.
- ^ab"28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz"(PDF).ST Microelectronics.Retrieved23 December2019.
- ^ab"S-Band Radar".NXP Semiconductors.Retrieved9 December2019.
- ^"RF Cellular Infrastructure".NXP Semiconductors.Retrieved7 December2019.
- ^abcd"RF Mobile Radio".NXP Semiconductors.Retrieved9 December2019.
- ^"UM0890: User manual – 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors"(PDF).ST Microelectronics.Retrieved23 December2019.
- ^ab"915 MHz RF Cooking".NXP Semiconductors.Retrieved7 December2019.
- ^abcTorres, Victor (21 June 2018)."Why LDMOS is the best technology for RF energy".Microwave Engineering Europe.Ampleon.Retrieved10 December2019.
- ^abc"RF Defrosting".NXP Semiconductors.Retrieved12 December2019.
- ^"White Paper – 50V RF LDMOS: An ideal RF power technology for ISM, broadcast and commercial aerospace applications"(PDF).NXP Semiconductors.Freescale Semiconductor.September 2011.Retrieved4 December2019.
- ^ab"RF Cellular Infrastructure".NXP Semiconductors.Retrieved12 December2019.
- ^"450 - 1000 MHz".NXP Semiconductors.Retrieved12 December2019.
- ^"3400 - 4100 MHz".NXP Semiconductors.Retrieved12 December2019.
- ^"HF, VHF and UHF Radar".NXP Semiconductors.Retrieved7 December2019.