LOCOS
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1) Silicon 2) Silicon dioxide
LOCOS,short forLOCal Oxidation of Silicon,is amicrofabricationprocess wheresilicon dioxideis formed in selected areas on a silicon wafer having the Si-SiO2interface at a lower point than the rest of the silicon surface. As of 2008 it was largely superseded byshallow trench isolation.
This technology was developed to insulateMOS transistorsfrom each other and limit transistor cross-talk. The main goal is to create asilicon oxideinsulating structure that penetrates under the surface of the wafer, so that the Si-SiO2interface occurs at a lower point than the rest of the silicon surface. This cannot be easily achieved by etching field oxide.Thermal oxidationof selected regions surrounding transistors is used instead. The oxygen penetrates in depth of the wafer, reacts with silicon and transforms it into silicon oxide. In this way, an immersed structure is formed. For process design and analysis purposes, the oxidation of silicon surfaces can be modeled effectively using theDeal–Grove model.[1]
References
[edit]- ^Liu, M.; Peng, J.; et al. (2016)."Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires".Theoretical and Applied Mechanics Letters.6(5): 195–199.arXiv:1911.08908.doi:10.1016/j.taml.2016.08.002.