Abstract
The dynamics of the temperature transformation of the emission spectrum of light-emitting diodes using the “running” gate mode of the photodetecting complementary metal oxide semiconductor (CMOS) matrix were investigated. A device has been developed for measuring the parameters of the spectrum shift of LEDs when they are switched on. The device is based on the optical system of the SF-46 spectrophotometer without an exit slit and with a focusing system in front of an SCMOS-00350KPA CMOS photodetector array with a 480 × 640 pixel photosensitive area and 84 μs line-by-line recording time. In terms of speed and wavelength resolution (0.125 nm), the device significantly surpasses the domestic and foreign IS3000-LED, Cary 100/300, Ocean Optic USB2000, etc., spectrometers. The time dependences of the spectrum shift of the red SMD-LED FYLS-3528BURC in the first 40 ms after switching it on at different values of the operating current were obtained experimentally. The obtained dependences can be used to evaluate the thermal parameters of LEDs.
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This work was carried out within the framework of a state assignment with partial support from the Russian Foundation for Basic Research (project No. 19-07-00562 A).
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Sergeev, V.A., Berintsev, A.V., Novikov, S.G. et al. Measuring the Temperature Shift of the Emission Spectrum of LEDs while Turning Them on with a CMOS Photo Receiving Matrix. Instrum Exp Tech 64, 102–106 (2021). https://doi.org/10.1134/S0020441221010103
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DOI: https://doi.org/10.1134/S0020441221010103