Jump to content

Leo Esaki

From Simple English Wikipedia, the free encyclopedia
Leo Esaki
Leo Esaki in 1959
Born(1925-03-12)March 12, 1925(age 99)
NationalityJapan
Alma materUniversity of Tokyo
Known forelectron tunneling,Esaki diode
AwardsStuart Ballantine Medal(1961)
Nobel Prize in Physics(1973)
IEEE Medal of Honor
Scientific career
FieldsApplied physics

Reona Esaki( giang kỳ linh ô nạiEsaki Reona,born March 12, 1925), also known asLeo Esaki,is aJapanesephysicist. He was awarded theNobel Prize in Physicsin 1973 withIvar GiaeverandBrian David Josephson.He won the prize for his discovery of the phenomenon ofelectron tunneling.[1]

He is known for his invention of theEsaki diode,which exploited that phenomenon. This research was done when he was with Tokyo Tsushin Kogyo (now known asSony). He has also contributed in being a pioneer of the semiconductorsuperlatticewhile he was with IBM.

Esaki was born on March 12, 1925 inHigashiōsaka,Japan.[2]He studied at theUniversity of Tokyo.

References[change|change source]

  1. Esaki, L.; Tsu, R. (1970)."Superlattice and Negative Differential Conductivity in Semiconductors".IBM Journal of Research and Development.14:61–65.doi:10.1147/rd.141.0061.
  2. Esaki, Leo, "Long Journey into Tunneling,"Nobel Lecture,Dec 12, 1973.

Other websites[change|change source]