‡a
electronblockingbythepotentialbarrieroriginatedfromtheasymmetricallocaldensityofstateintheoxidesemiconductor
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Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor.
‡9
1
‡a
analysisofthehumpphenomenonandneedledefectstatesformedbydrivingstressintheoxidesemiconductor
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Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor
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1