Search
| Leader | 00000nz a2200037n 45 0 | ||
|---|---|---|---|
| 001 | WKP|Q9315029 (VIAF cluster) (Authority/Source Record) | ||
| 003 | WKP | ||
| 005 | 20241121000210.0 | ||
| 008 | 241121nneanz||abbn n and d | ||
| 035 | ‡a (WKP)Q9315029 | ||
| 035 | ‡a (OCoLC)Q9315029 | ||
| 043 | ‡c CN | ||
| 046 | ‡f 19660000 | ||
| 100 | 0 | ‡a 王曦 ‡c 中共广东省委常委、副省长 ‡9 zh | |
| 375 | ‡a 1 ‡2 iso5218 | ||
| 400 | 0 | ‡a Wang Xi ‡c personnalité politique chinoise ‡9 fr | |
| 400 | 0 | ‡a Wang Xi ‡c Chinese scientist, politicien ‡9 en | |
| 400 | 0 | ‡a Vương Hi ‡c Chính trị gia Trung Quốc ‡9 vi | |
| 400 | 0 | ‡a 王曦 ‡c 材料科学家 ‡9 zh-cn | |
| 670 | ‡a Author's A novel accumulation mode complementary GAAC FinFETs inverter with hybrid orientation SOI substrate | ||
| 670 | ‡a Author's Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET | ||
| 670 | ‡a Author's FIELD EMISSION FROM AMORPHOUS DIAMOND FILMS | ||
| 670 | ‡a Author's Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET | ||
| 670 | ‡a Author's 一种新型混合晶向积累型圆柱体共包围栅互补金属氧化物场效应晶体管 | ||
| 670 | ‡a Author's 两步氧离子注入工艺制备SOI材料研究 | ||
| 670 | ‡a Author's 具有双轴取向YSZ缓冲层的离子束辅助沉积合成研究 | ||
| 670 | ‡a Author's 埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响 | ||
| 670 | ‡a Author's 超短沟道绝缘层上硅平面场效应晶体管中热载流子注入应力导致的退化对沟道长度的依赖性 | ||
| 670 | ‡a Author's 非晶金刚石薄膜的场致电子发射性能研究 | ||
| 670 | ‡a wikidata authority control ‡u https://viaf.org/processed/ISNI|0000000501663399 | ||
| 670 | ‡a wikidata authority control ‡u https://viaf.org/viaf/277147423188144882497 | ||
| 670 | ‡a wikidata authority control ‡u https://viaf.org/processed/LC|n 2016047157 | ||
| 670 | ‡a wikidata site links ‡u https://vi.wikipedia.org/wiki/Vương_Hi | ||
| 670 | ‡a wikidata site links ‡u https://en.wikipedia.org/wiki/Wang_Xi_(politician) | ||
| 670 | ‡a wikidata site links ‡u https://zh.wikipedia.org/wiki/王曦_(材料科学家) | ||
| 919 | ‡a fieldemissionfromamorphousdiamondfilms ‡A FIELD EMISSION FROM AMORPHOUS DIAMOND FILMS ‡9 1 | ||
| 919 | ‡a 一种新型混合晶向积累型円柱体共勹囲柵互补金属氧化物场俲峺晶体筦 ‡A 一种新型混合晶向积累型圆柱体共包围栅互补金属氧化物场效应晶体管 ‡9 1 | ||
| 919 | ‡a 両步氧离只注入工兿制俻soi材料揅究 ‡A 两步氧离子注入工艺制备SOI材料研究 ‡9 1 | ||
| 919 | ‡a 具有双軸取向ysz緩冲层的离只束輔助沈积合成揅究 ‡A 具有双轴取向YSZ缓冲层的离子束辅助沉积合成研究 ‡9 1 | ||
| 919 | ‡a 埋氧层注氮工兿对㔾份秏侭soinmosfet特性的影响 ‡A 埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响 ‡9 1 | ||
| 919 | ‡a 超短沟道絕緣层丄硅平面场俲峺晶体筦中热傤流只注入峺力导緻的退化对沟道長度的依賴性 ‡A 超短沟道绝缘层上硅平面场效应晶体管中热载流子注入应力导致的退化对沟道长度的依赖性 ‡9 1 | ||
| 919 | ‡a 非晶金刚石薄膜的场緻电只发射性能揅究 ‡A 非晶金刚石薄膜的场致电子发射性能研究 ‡9 1 | ||
| 919 | ‡a gatelengthdependenceofhotcarrierinjectiondegradationinshortchannelsilicononinsulatorplanarmosfet ‡A Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET ‡9 1 | ||
| 919 | ‡a effectsofthetechnologyofimplantingnitrogenintoburiedoxidelayeronthecharacteristicsofpartiallydepletedsoinmosfet ‡A Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET ‡9 1 | ||
| 919 | ‡a novelaccumulationmodecomplementarygaacfinfetsinverterwithhybridorientationsoisubstrate ‡A A novel accumulation mode complementary GAAC FinFETs inverter with hybrid orientation SOI substrate ‡9 1 | ||
| 946 | ‡a b ‡9 1 | ||
| 947 | ‡a CN ‡9 1 | ||
| 996 | ‡2 BIBSYS|1011098 | ||
| 996 | ‡2 DNB|1309783373 | ||
| 996 | ‡2 NTA|315600675 | ||
| 996 | ‡2 DNB|115222588X | ||
| 996 | ‡2 DNB|1325851043 | ||
| 996 | ‡2 DNB|1038027179 | ||
| 996 | ‡2 DNB|1339053497 | ||
| 996 | ‡2 DNB|1236695615 | ||
| 996 | ‡2 LC|n 88190086 | ||
| 996 | ‡2 SUDOC|169457354 | ||
| 996 | ‡2 DNB|1219309338 | ||
| 996 | ‡2 DNB|1189074877 | ||
| 996 | ‡2 BNF|17948604 | ||
| 996 | ‡2 DNB|1321032080 | ||
| 996 | ‡2 SUDOC|158376919 | ||
| 996 | ‡2 DNB|1065746237 | ||
| 996 | ‡2 DNB|1068326077 | ||
| 996 | ‡2 DNB|1028946732 | ||
| 996 | ‡2 ISNI|0000000064308013 | ||
| 996 | ‡2 DNB|1255103132 | ||
| 996 | ‡2 DNB|1025985915 | ||
| 996 | ‡2 DNB|1185187014 | ||
| 996 | ‡2 DNB|115383054X | ||
| 996 | ‡2 NUKAT|n 2012217630 | ||
| 996 | ‡2 DNB|1121211739 | ||
| 996 | ‡2 DNB|1142562107 | ||
| 996 | ‡2 LC|n 2010078553 | ||
| 996 | ‡2 DNB|1208531913 | ||
| 996 | ‡2 LC|nr 91022007 | ||
| 996 | ‡2 DNB|1161813063 | ||
| 996 | ‡2 ISNI|0000000502668845 | ||
| 996 | ‡2 DNB|1302600214 | ||
| 996 | ‡2 LC|no2013068798 | ||
| 996 | ‡2 DNB|1335112871 | ||
| 996 | ‡2 ISNI|0000000063777117 | ||
| 996 | ‡2 DNB|1038700140 | ||
| 996 | ‡2 DNB|1014835933 | ||
| 996 | ‡2 DNB|1323244530 | ||
| 996 | ‡2 LC|n 98072627 | ||
| 996 | ‡2 ISNI|0000000449644667 | ||
| 996 | ‡2 LC|no2011041650 | ||
| 996 | ‡2 NSK|000202597 | ||
| 996 | ‡2 SZ|1255103132 | ||
| 996 | ‡2 ISNI|0000000120985319 | ||
| 996 | ‡2 CAOONL|ncf12131745 | ||
| 996 | ‡2 LC|nr 99020189 | ||
| 996 | ‡2 DNB|1200244818 | ||
| 996 | ‡2 ISNI|0000000388358367 | ||
| 996 | ‡2 PLWABN|9810693529005606 | ||
| 996 | ‡2 BNF|13554184 | ||
| 996 | ‡2 J9U|987007318450705171 | ||
| 996 | ‡2 ISNI|0000000108409079 | ||
| 996 | ‡2 PLWABN|9812850024605606 | ||
| 996 | ‡2 DNB|1345857748 | ||
| 996 | ‡2 DNB|1318445167 | ||
| 996 | ‡2 ISNI|000000006412867X | ||
| 996 | ‡2 DNB|140294511 | ||
| 996 | ‡2 NUKAT|n 2004016434 | ||
| 996 | ‡2 RERO|A000175139 | ||
| 996 | ‡2 DNB|1161964827 | ||
| 996 | ‡2 SUDOC|200293346 | ||
| 996 | ‡2 DNB|1044005270 | ||
| 996 | ‡2 SUDOC|241084423 | ||
| 996 | ‡2 BIBSYS|13065306 | ||
| 996 | ‡2 DNB|1241993726 | ||
| 996 | ‡2 DNB|1268199478 | ||
| 997 | ‡a 1966 0 lived 0000 0 ‡9 1 | ||
| 998 | ‡a Wang, Xi, ‡2 LC|n 2016047157 ‡3 suggested | ||
| 998 | ‡a Wang, Xi ‡2 ISNI|0000000501663399 ‡3 suggested |
