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Leader 00000nz a2200037n 45 0
001 WKP|Q46952131 (VIAF cluster) (Authority/Source Record)
003 WKP
005 20241120235757.0
008 241120nneanz||abbn n and d
035 ‎‡a (WKP)Q46952131‏
024 ‎‡a 0000-0003-4731-1976‏ ‎‡2 orcid‏
035 ‎‡a (OCoLC)Q46952131‏
100 0 ‎‡a Wei Lu‏ ‎‡9 ast‏ ‎‡9 nl‏ ‎‡9 es‏ ‎‡9 sl‏
375 ‎‡a 1‏ ‎‡2 iso5218‏
400 0 ‎‡a Wei Lu‏ ‎‡c researcher (ORCID 0000-0003-4731-1976)‏ ‎‡9 en‏
670 ‎‡a Author's A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications‏
670 ‎‡a Author's A general memristor-based partial differential equation solver‏
670 ‎‡a Author's A Native Stochastic Computing Architecture Enabled by Memristors‏
670 ‎‡a Author's A resistance-switchable and ferroelectric metal-organic framework‏
670 ‎‡a Author's Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities‏
670 ‎‡a Author's An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions‏
670 ‎‡a Author's Andreev tunneling enhanced by Coulomb oscillations in superconductor-semiconductor hybrid Ge/Si nanowire devices‏
670 ‎‡a Author's artikull shkencor i botuar në vitin 2022‏
670 ‎‡a Author's Branched SnO2 nanowires on metallic nanowire backbones for ethanol sensors application‏
670 ‎‡a Author's Building Neuromorphic Circuits with Memristive Devices‏
670 ‎‡a Author's Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM‏
670 ‎‡a Author's CMOS compatible nanoscale nonvolatile resistance switching memory‏
670 ‎‡a Author's Coherent Single Charge Transport in Molecular-Scale Silicon Nanowires‏
670 ‎‡a Author's Complementary resistive switching in tantalum oxide-based resistive memory devices‏
670 ‎‡a Author's Comprehensive physical model of dynamic resistive switching in an oxide memristor‏
670 ‎‡a Author's Conduction mechanism of a TaO‏
670 ‎‡a Author's Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays‏
670 ‎‡a Author's Controlled 3D buckling of silicon nanowires for stretchable electronics‏
670 ‎‡a Author's Controlled deposition of individual single-walled carbon nanotubes on chemically functionalized templates‏
670 ‎‡a Author's Crossbar RRAM Arrays: Selector Device Requirements During Read Operation‏
670 ‎‡a Author's Crossbar RRAM Arrays: Selector Device Requirements During Write Operation‏
670 ‎‡a Author's Data Clustering using Memristor Networks‏
670 ‎‡a Author's Device and SPICE modeling of RRAM devices‏
670 ‎‡a Author's Doping-dependent electrical characteristics of SnO2 nanowires‏
670 ‎‡a Author's Efficient Si Nanowire Array Transfer via Bi-Layer Structure Formation Through Metal-Assisted Chemical Etching‏
670 ‎‡a Author's Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.‏
670 ‎‡a Author's Electrochemical metallization cells—blending nanoionics into nanoelectronics?‏
670 ‎‡a Author's Electrochemistry at the Nanoscale.‏
670 ‎‡a Author's Electronic and optical properties of oxygen vacancies in amorphous Ta2O5 from first principles.‏
670 ‎‡a Author's Emulation of synaptic metaplasticity in memristors‏
670 ‎‡a Author's Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions‏
670 ‎‡a Author's Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity‏
670 ‎‡a Author's Experimental Demonstration of Feature Extraction and Dimensionality Reduction Using Memristor Networks‏
670 ‎‡a Author's FPAA/Memristor Hybrid Computing Infrastructure‏
670 ‎‡a Author's Fully transparent thin-film transistor devices based on SnO2 nanowires‏
670 ‎‡a Author's Ge nanowire photodetector with high photoconductive gain epitaxially integrated on Si substrate‏
670 ‎‡a Author's Ge/Si nanowire heterostructures as high-performance field-effect transistors‏
670 ‎‡a Author's Growth and electrical properties of Al-catalyzed Si nanowires‏
670 ‎‡a Author's Hierarchical 3D Nanostructure Organization for Next-Generation Devices‏
670 ‎‡a Author's High-Density Crossbar Arrays Based on a Si Memristive System‏
670 ‎‡a Author's High-performance transparent conducting oxide nanowires‏
670 ‎‡a Author's In Situ Nanoscale Electric Field Control of Magnetism by Nanoionics‏
670 ‎‡a Author's Interference and memory capacity effects in memristive systems‏
670 ‎‡a Author's Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects‏
670 ‎‡a Author's Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing‏
670 ‎‡a Author's ITO nanowires and nanoparticles for transparent films‏
670 ‎‡a Author's K-means Data Clustering with Memristor Networks‏
670 ‎‡a Author's Latch-up based bidirectional npn selector for bipolar resistance-change memory‏
670 ‎‡a Author's Mechanical properties of vapor-liquid-solid synthesized silicon nanowires‏
670 ‎‡a Author's Megahertz frequency characterization of transparent nanowire-based thin-film transistors‏
670 ‎‡a Author's Memristive computing devices and applications‏
670 ‎‡a Author's Memristive technologies for data storage, computation, encryption, and radio-frequency communication‏
670 ‎‡a Author's Memristors: Going active‏
670 ‎‡a Author's Nanoelectronics from the bottom up.‏
670 ‎‡a Author's Nanoscale electrochemistry using dielectric thin films as solid electrolytes‏
670 ‎‡a Author's Nanoscale memristor device as synapse in neuromorphic systems.‏
670 ‎‡a Author's Nanoscale resistive memory with intrinsic diode characteristics and long endurance‏
670 ‎‡a Author's Nanoscale resistive switching devices: mechanisms and modeling‏
670 ‎‡a Author's Nanostructured thin films made by dewetting method of layer-by-layer assembly‏
670 ‎‡a Author's Nanowire Transistor Performance Limits and Applications‏
670 ‎‡a Author's Observation of conductance quantization in oxide-based resistive switching memory‏
670 ‎‡a Author's Observation of conducting filament growth in nanoscale resistive memories‏
670 ‎‡a Author's On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics‏
670 ‎‡a Author's One-dimensional hole gas in germanium/silicon nanowire heterostructures‏
670 ‎‡a Author's Optogenetics-Inspired Tunable Synaptic Functions in Memristors‏
670 ‎‡a Author's Organic vapor discrimination with chemiresistor arrays of temperature modulated tin-oxide nanowires and thiolate-monolayer-protected gold nanoparticles‏
670 ‎‡a Author's Oxide heterostructure resistive memory‏
670 ‎‡a Author's Oxide resistive memory with functionalized graphene as built-in selector element‏
670 ‎‡a Author's Programmable resistance switching in nanoscale two-terminal devices.‏
670 ‎‡a Author's Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices‏
670 ‎‡a Author's Radio frequency nanowire resonators and in situ frequency tuning‏
670 ‎‡a Author's Radio-Frequency Operation of Transparent Nanowire Thin-Film Transistors‏
670 ‎‡a Author's Random telegraph noise and resistance switching analysis of oxide based resistive memory‏
670 ‎‡a Author's Real-time detection of electron tunnelling in a quantum dot.‏
670 ‎‡a Author's Real-time electron counting studies on charge fluctuations in a semiconductor quantum dot‏
670 ‎‡a Author's Real-time electron counting studies on charge fluctuations in a semiconductor quantum dot (Invited Paper)‏
670 ‎‡a Author's Reservoir computing using dynamic memristors for temporal information processing.‏
670 ‎‡a Author's Resistance switching in polycrystalline BiFeO3 thin films‏
670 ‎‡a Author's Retention failure analysis of metal-oxide based resistive memory‏
670 ‎‡a Author's Self-Limited and Forming-Free CBRAM Device With Double Al2O3 ALD Layers‏
670 ‎‡a Author's Semiconductor nanowires‏
670 ‎‡a Author's Short-term memory to long-term memory transition in a nanoscale memristor‏
670 ‎‡a Author's Si/a-Si core/shell nanowires as nonvolatile crossbar switches‏
670 ‎‡a Author's Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures‏
670 ‎‡a Author's Single-Readout High-Density Memristor Crossbar‏
670 ‎‡a Author's Sparse coding with memristor networks‏
670 ‎‡a Author's Stabilization of Mode-Dependent Impulsive Hybrid Systems Driven by DFA With Mixed-Mode Effects‏
670 ‎‡a Author's Stochastic memristive devices for computing and neuromorphic applications‏
670 ‎‡a Author's Strong and Tunable Spin−Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires‏
670 ‎‡a Author's Synaptic behaviors and modeling of a metal oxide memristive device‏
670 ‎‡a Author's Temporal information encoding in dynamic memristive devices‏
670 ‎‡a Author's The future of electronics based on memristive systems‏
670 ‎‡a Author's Transparent metallic Sb-doped SnO2 nanowires‏
670 ‎‡a Author's Ultralow Sub-1-nA Operating Current Resistive Memory With Intrinsic Non-Linear Characteristics‏
670 ‎‡a Author's Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor‏
670 ‎‡a Author's Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor‏
670 ‎‡a Author's Vertical nanowire heterojunction devices based on a clean Si/Ge interface‏
670 ‎‡a Author's Very Low-Programming-Current RRAM With Self-Rectifying Characteristics‏
670 ‎‡a wikidata authority control‏ ‎‡u https://viaf.org/processed/DNB|1024210839‏
670 ‎‡a wikidata authority control‏ ‎‡u https://viaf.org/processed/ISNI|0000000446250486‏
670 ‎‡a wikidata authority control‏ ‎‡u https://viaf.org/viaf/314906469‏
670 ‎‡a wikidata authority control‏ ‎‡u https://viaf.org/processed/LC|no2015023730‏
909 ‎‡a (orcid) 0000000347311976‏ ‎‡9 1‏
912 ‎‡a artikullshkencor1botuarnevitin‏ ‎‡A artikull shkencor i botuar në vitin 2022‏ ‎‡9 1‏
919 ‎‡a oxideheterostructureresistivememory‏ ‎‡A Oxide heterostructure resistive memory‏ ‎‡9 1‏
919 ‎‡a verylowprogrammingcurrentrramwithselfrectifyingcharacteristics‏ ‎‡A Very Low-Programming-Current RRAM With Self-Rectifying Characteristics‏ ‎‡9 1‏
919 ‎‡a verticalnanowireheterojunctiondevicesbasedonacleansigeinterface‏ ‎‡A Vertical nanowire heterojunction devices based on a clean Si/Ge interface‏ ‎‡9 1‏
919 ‎‡a verticalgesicoreshellnanowirejunctionlesstransistor‏ ‎‡A Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor‏ ‎‡9 1‏
919 ‎‡a utilizingmultiplestatevariablestoimprovethedynamicrangeofanalogswitchinginamemristor‏ ‎‡A Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor‏ ‎‡9 1‏
919 ‎‡a ultralowsub1naoperatingcurrentresistivememorywithintrinsicnonlinearcharacteristics‏ ‎‡A Ultralow Sub-1-nA Operating Current Resistive Memory With Intrinsic Non-Linear Characteristics‏ ‎‡9 1‏
919 ‎‡a transparentmetallicsbdopedsno2nanowires‏ ‎‡A Transparent metallic Sb-doped SnO2 nanowires‏ ‎‡9 1‏
919 ‎‡a futureofelectronicsbasedonmemristivesystems‏ ‎‡A The future of electronics based on memristive systems‏ ‎‡9 1‏
919 ‎‡a temporalinformationencodingindynamicmemristivedevices‏ ‎‡A Temporal information encoding in dynamic memristive devices‏ ‎‡9 1‏
919 ‎‡a synapticbehaviorsandmodelingofametaloxidememristivedevice‏ ‎‡A Synaptic behaviors and modeling of a metal oxide memristive device‏ ‎‡9 1‏
919 ‎‡a strongandtunablespinorbitcouplingof1dimensionalholesingesicoreshellnanowires‏ ‎‡A Strong and Tunable Spin−Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires‏ ‎‡9 1‏
919 ‎‡a stochasticmemristivedevicesforcomputingandneuromorphicapplications‏ ‎‡A Stochastic memristive devices for computing and neuromorphic applications‏ ‎‡9 1‏
919 ‎‡a stabilizationofmodedependentimpulsivehybridsystemsdrivenbydfawithmixedmodeeffects‏ ‎‡A Stabilization of Mode-Dependent Impulsive Hybrid Systems Driven by DFA With Mixed-Mode Effects‏ ‎‡9 1‏
919 ‎‡a sparsecodingwithmemristornetworks‏ ‎‡A Sparse coding with memristor networks‏ ‎‡9 1‏
919 ‎‡a singlereadouthighdensitymemristorcrossbar‏ ‎‡A Single-Readout High-Density Memristor Crossbar‏ ‎‡9 1‏
919 ‎‡a singlecrystalmetallicnanowiresandmetalsemiconductornanowireheterostructures‏ ‎‡A Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures‏ ‎‡9 1‏
919 ‎‡a siasicoreshellnanowiresasnonvolatilecrossbarswitches‏ ‎‡A Si/a-Si core/shell nanowires as nonvolatile crossbar switches‏ ‎‡9 1‏
919 ‎‡a shorttermmemorytolongtermmemorytransitioninananoscalememristor‏ ‎‡A Short-term memory to long-term memory transition in a nanoscale memristor‏ ‎‡9 1‏
919 ‎‡a semiconductornanowires‏ ‎‡A Semiconductor nanowires‏ ‎‡9 1‏
919 ‎‡a selflimitedandformingfreecbramdevicewithdoubleal2o3aldlayers‏ ‎‡A Self-Limited and Forming-Free CBRAM Device With Double Al2O3 ALD Layers‏ ‎‡9 1‏
919 ‎‡a retentionfailureanalysisofmetaloxidebasedresistivememory‏ ‎‡A Retention failure analysis of metal-oxide based resistive memory‏ ‎‡9 1‏
919 ‎‡a resistanceswitchinginpolycrystallinebifeo3thinfilms‏ ‎‡A Resistance switching in polycrystalline BiFeO3 thin films‏ ‎‡9 1‏
919 ‎‡a reservoircomputingusingdynamicmemristorsfortemporalinformationprocessing‏ ‎‡A Reservoir computing using dynamic memristors for temporal information processing.‏ ‎‡9 1‏
919 ‎‡a realtimeelectroncountingstudiesonchargefluctuationsinasemiconductorquantumdotinvitedpaper‏ ‎‡A Real-time electron counting studies on charge fluctuations in a semiconductor quantum dot (Invited Paper)‏ ‎‡9 1‏
919 ‎‡a realtimeelectroncountingstudiesonchargefluctuationsinasemiconductorquantumdot‏ ‎‡A Real-time electron counting studies on charge fluctuations in a semiconductor quantum dot‏ ‎‡9 1‏
919 ‎‡a realtimedetectionofelectrontunnellinginaquantumdot‏ ‎‡A Real-time detection of electron tunnelling in a quantum dot.‏ ‎‡9 1‏
919 ‎‡a randomtelegraphnoiseandresistanceswitchinganalysisofoxidebasedresistivememory‏ ‎‡A Random telegraph noise and resistance switching analysis of oxide based resistive memory‏ ‎‡9 1‏
919 ‎‡a radiofrequencyoperationoftransparentnanowirethinfilmtransistors‏ ‎‡A Radio-Frequency Operation of Transparent Nanowire Thin-Film Transistors‏ ‎‡9 1‏
919 ‎‡a radiofrequencynanowireresonatorsandinsitufrequencytuning‏ ‎‡A Radio frequency nanowire resonators and in situ frequency tuning‏ ‎‡9 1‏
919 ‎‡a progressinthecharacterizationsandunderstandingofconductingfilamentsinresistiveswitchingdevices‏ ‎‡A Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices‏ ‎‡9 1‏
919 ‎‡a programmableresistanceswitchinginnanoscale2terminaldevices‏ ‎‡A Programmable resistance switching in nanoscale two-terminal devices.‏ ‎‡9 1‏
919 ‎‡a oxideresistivememorywithfunctionalizedgrapheneasbuiltinselectorelement‏ ‎‡A Oxide resistive memory with functionalized graphene as built-in selector element‏ ‎‡9 1‏
919 ‎‡a organicvapordiscriminationwithchemiresistorarraysoftemperaturemodulatedtinoxidenanowiresandthiolatemonolayerprotectedgoldnanoparticles‏ ‎‡A Organic vapor discrimination with chemiresistor arrays of temperature modulated tin-oxide nanowires and thiolate-monolayer-protected gold nanoparticles‏ ‎‡9 1‏
919 ‎‡a optogeneticsinspiredtunablesynapticfunctionsinmemristors‏ ‎‡A Optogenetics-Inspired Tunable Synaptic Functions in Memristors‏ ‎‡9 1‏
919 ‎‡a 1dimensionalholegasingermaniumsiliconnanowireheterostructures‏ ‎‡A One-dimensional hole gas in germanium/silicon nanowire heterostructures‏ ‎‡9 1‏
919 ‎‡a ondemandreconfigurationofnanomaterialswhenelectronicsmeetsionics‏ ‎‡A On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics‏ ‎‡9 1‏
919 ‎‡a observationofconductingfilamentgrowthinnanoscaleresistivememories‏ ‎‡A Observation of conducting filament growth in nanoscale resistive memories‏ ‎‡9 1‏
919 ‎‡a observationofconductancequantizationinoxidebasedresistiveswitchingmemory‏ ‎‡A Observation of conductance quantization in oxide-based resistive switching memory‏ ‎‡9 1‏
919 ‎‡a nanowiretransistorperformancelimitsandapplications‏ ‎‡A Nanowire Transistor Performance Limits and Applications‏ ‎‡9 1‏
919 ‎‡a nanostructuredthinfilmsmadebydewettingmethodoflayerbylayerassembly‏ ‎‡A Nanostructured thin films made by dewetting method of layer-by-layer assembly‏ ‎‡9 1‏
919 ‎‡a nanoscaleresistiveswitchingdevicesmechanismsandmodeling‏ ‎‡A Nanoscale resistive switching devices: mechanisms and modeling‏ ‎‡9 1‏
919 ‎‡a nanoscaleresistivememorywithintrinsicdiodecharacteristicsandlongendurance‏ ‎‡A Nanoscale resistive memory with intrinsic diode characteristics and long endurance‏ ‎‡9 1‏
919 ‎‡a nanoscalememristordeviceassynapseinneuromorphicsystems‏ ‎‡A Nanoscale memristor device as synapse in neuromorphic systems.‏ ‎‡9 1‏
919 ‎‡a nanoscaleelectrochemistryusingdielectricthinfilmsassolidelectrolytes‏ ‎‡A Nanoscale electrochemistry using dielectric thin films as solid electrolytes‏ ‎‡9 1‏
919 ‎‡a nanoelectronicsfromthebottomup‏ ‎‡A Nanoelectronics from the bottom up.‏ ‎‡9 1‏
919 ‎‡a memristorsgoingactive‏ ‎‡A Memristors: Going active‏ ‎‡9 1‏
919 ‎‡a memristivetechnologiesfordatastoragecomputationencryptionandradiofrequencycommunication‏ ‎‡A Memristive technologies for data storage, computation, encryption, and radio-frequency communication‏ ‎‡9 1‏
919 ‎‡a memristivecomputingdevicesandapplications‏ ‎‡A Memristive computing devices and applications‏ ‎‡9 1‏
919 ‎‡a megahertzfrequencycharacterizationoftransparentnanowirebasedthinfilmtransistors‏ ‎‡A Megahertz frequency characterization of transparent nanowire-based thin-film transistors‏ ‎‡9 1‏
919 ‎‡a mechanicalpropertiesofvaporliquidsolidsynthesizedsiliconnanowires‏ ‎‡A Mechanical properties of vapor-liquid-solid synthesized silicon nanowires‏ ‎‡9 1‏
919 ‎‡a latchupbasedbidirectionalnpnselectorforbipolarresistancechangememory‏ ‎‡A Latch-up based bidirectional npn selector for bipolar resistance-change memory‏ ‎‡9 1‏
919 ‎‡a kmeansdataclusteringwithmemristornetworks‏ ‎‡A K-means Data Clustering with Memristor Networks‏ ‎‡9 1‏
919 ‎‡a itonanowiresandnanoparticlesfortransparentfilms‏ ‎‡A ITO nanowires and nanoparticles for transparent films‏ ‎‡9 1‏
919 ‎‡a ionicmodulationandioniccouplingeffectsinmos2devicesforneuromorphiccomputing‏ ‎‡A Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing‏ ‎‡9 1‏
919 ‎‡a iodinevacancyredistributioninorganicinorganichalideperovskitefilmsandresistiveswitchingeffects‏ ‎‡A Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects‏ ‎‡9 1‏
919 ‎‡a interferenceandmemorycapacityeffectsinmemristivesystems‏ ‎‡A Interference and memory capacity effects in memristive systems‏ ‎‡9 1‏
919 ‎‡a insitunanoscaleelectricfieldcontrolofmagnetismbynanoionics‏ ‎‡A In Situ Nanoscale Electric Field Control of Magnetism by Nanoionics‏ ‎‡9 1‏
919 ‎‡a highperformancetransparentconductingoxidenanowires‏ ‎‡A High-performance transparent conducting oxide nanowires‏ ‎‡9 1‏
919 ‎‡a highdensitycrossbararraysbasedonasimemristivesystem‏ ‎‡A High-Density Crossbar Arrays Based on a Si Memristive System‏ ‎‡9 1‏
919 ‎‡a hierarchical3dnanostructureorganizationfornextgenerationdevices‏ ‎‡A Hierarchical 3D Nanostructure Organization for Next-Generation Devices‏ ‎‡9 1‏
919 ‎‡a growthandelectricalpropertiesofalcatalyzedsinanowires‏ ‎‡A Growth and electrical properties of Al-catalyzed Si nanowires‏ ‎‡9 1‏
919 ‎‡a gesinanowireheterostructuresashighperformancefieldeffecttransistors‏ ‎‡A Ge/Si nanowire heterostructures as high-performance field-effect transistors‏ ‎‡9 1‏
919 ‎‡a genanowirephotodetectorwithhighphotoconductivegainepitaxiallyintegratedonsisubstrate‏ ‎‡A Ge nanowire photodetector with high photoconductive gain epitaxially integrated on Si substrate‏ ‎‡9 1‏
919 ‎‡a fullytransparentthinfilmtransistordevicesbasedonsno2nanowires‏ ‎‡A Fully transparent thin-film transistor devices based on SnO2 nanowires‏ ‎‡9 1‏
919 ‎‡a fpaamemristorhybridcomputinginfrastructure‏ ‎‡A FPAA/Memristor Hybrid Computing Infrastructure‏ ‎‡9 1‏
919 ‎‡a experimentaldemonstrationoffeatureextractionanddimensionalityreductionusingmemristornetworks‏ ‎‡A Experimental Demonstration of Feature Extraction and Dimensionality Reduction Using Memristor Networks‏ ‎‡9 1‏
919 ‎‡a experimentaldemonstrationofa2ordermemristoranditsabilitytobiorealisticallyimplementsynapticplasticity‏ ‎‡A Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity‏ ‎‡9 1‏
919 ‎‡a esakitunneldiodesbasedonverticalsigenanowireheterojunctions‏ ‎‡A Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions‏ ‎‡9 1‏
919 ‎‡a emulationofsynapticmetaplasticityinmemristors‏ ‎‡A Emulation of synaptic metaplasticity in memristors‏ ‎‡9 1‏
919 ‎‡a electronicandopticalpropertiesofoxygenvacanciesinamorphousta2o5from1principles‏ ‎‡A Electronic and optical properties of oxygen vacancies in amorphous Ta2O5 from first principles.‏ ‎‡9 1‏
919 ‎‡a electrochemistryatthenanoscale‏ ‎‡A Electrochemistry at the Nanoscale.‏ ‎‡9 1‏
919 ‎‡a electrochemicalmetallizationcellsblendingnanoionicsintonanoelectronics‏ ‎‡A Electrochemical metallization cells—blending nanoionics into nanoelectronics?‏ ‎‡9 1‏
919 ‎‡a electrochemicaldynamicsofnanoscalemetallicinclusionsindielectrics‏ ‎‡A Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.‏ ‎‡9 1‏
919 ‎‡a efficientsinanowirearraytransferviabilayerstructureformationthroughmetalassistedchemicaletching‏ ‎‡A Efficient Si Nanowire Array Transfer via Bi-Layer Structure Formation Through Metal-Assisted Chemical Etching‏ ‎‡9 1‏
919 ‎‡a dopingdependentelectricalcharacteristicsofsno2nanowires‏ ‎‡A Doping-dependent electrical characteristics of SnO2 nanowires‏ ‎‡9 1‏
919 ‎‡a deviceandspicemodelingofrramdevices‏ ‎‡A Device and SPICE modeling of RRAM devices‏ ‎‡9 1‏
919 ‎‡a dataclusteringusingmemristornetworks‏ ‎‡A Data Clustering using Memristor Networks‏ ‎‡9 1‏
919 ‎‡a crossbarrramarraysselectordevicerequirementsduringwriteoperation‏ ‎‡A Crossbar RRAM Arrays: Selector Device Requirements During Write Operation‏ ‎‡9 1‏
919 ‎‡a crossbarrramarraysselectordevicerequirementsduringreadoperation‏ ‎‡A Crossbar RRAM Arrays: Selector Device Requirements During Read Operation‏ ‎‡9 1‏
919 ‎‡a controlleddepositionofindividualsinglewalledcarbonnanotubesonchemicallyfunctionalizedtemplates‏ ‎‡A Controlled deposition of individual single-walled carbon nanotubes on chemically functionalized templates‏ ‎‡9 1‏
919 ‎‡a controlled3dbucklingofsiliconnanowiresforstretchableelectronics‏ ‎‡A Controlled 3D buckling of silicon nanowires for stretchable electronics‏ ‎‡9 1‏
919 ‎‡a conductionmechanismofatao10basedselectoranditsapplicationincrossbarmemoryarrays‏ ‎‡A Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays‏ ‎‡9 1‏
919 ‎‡a conductionmechanismofatao‏ ‎‡A Conduction mechanism of a TaO‏ ‎‡9 1‏
919 ‎‡a comprehensivephysicalmodelofdynamicresistiveswitchinginanoxidememristor‏ ‎‡A Comprehensive physical model of dynamic resistive switching in an oxide memristor‏ ‎‡9 1‏
919 ‎‡a complementaryresistiveswitchingintantalumoxidebasedresistivememorydevices‏ ‎‡A Complementary resistive switching in tantalum oxide-based resistive memory devices‏ ‎‡9 1‏
919 ‎‡a coherentsinglechargetransportinmolecularscalesiliconnanowires‏ ‎‡A Coherent Single Charge Transport in Molecular-Scale Silicon Nanowires‏ ‎‡9 1‏
919 ‎‡a cmoscompatiblenanoscalenonvolatileresistanceswitchingmemory‏ ‎‡A CMOS compatible nanoscale nonvolatile resistance switching memory‏ ‎‡9 1‏
919 ‎‡a chargetransitionofoxygenvacanciesduringresistiveswitchinginoxidebasedrram‏ ‎‡A Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM‏ ‎‡9 1‏
919 ‎‡a buildingneuromorphiccircuitswithmemristivedevices‏ ‎‡A Building Neuromorphic Circuits with Memristive Devices‏ ‎‡9 1‏
919 ‎‡a branchedsno2nanowiresonmetallicnanowirebackbonesforethanolsensorsapplication‏ ‎‡A Branched SnO2 nanowires on metallic nanowire backbones for ethanol sensors application‏ ‎‡9 1‏
919 ‎‡a andreevtunnelingenhancedbycoulomboscillationsinsuperconductorsemiconductorhybridgesinanowiredevices‏ ‎‡A Andreev tunneling enhanced by Coulomb oscillations in superconductor-semiconductor hybrid Ge/Si nanowire devices‏ ‎‡9 1‏
919 ‎‡a optoelectronicresistiveswitchingmemorywithintegrateddemodulatingandarithmeticfunctions‏ ‎‡A An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions‏ ‎‡9 1‏
919 ‎‡a ambipolarinvertersusingsnothinfilmtransistorswithbalancedelectronandholemobilities‏ ‎‡A Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities‏ ‎‡9 1‏
919 ‎‡a resistanceswitchableandferroelectricmetalorganicframework‏ ‎‡A A resistance-switchable and ferroelectric metal-organic framework‏ ‎‡9 1‏
919 ‎‡a nativestochasticcomputingarchitectureenabledbymemristors‏ ‎‡A A Native Stochastic Computing Architecture Enabled by Memristors‏ ‎‡9 1‏
919 ‎‡a generalmemristorbasedpartialdifferentialequationsolver‏ ‎‡A A general memristor-based partial differential equation solver‏ ‎‡9 1‏
919 ‎‡a functionalhybridmemristorcrossbararraycmossystemfordatastorageandneuromorphicapplications‏ ‎‡A A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications‏ ‎‡9 1‏
943 ‎‡a 202x‏ ‎‡A 2022‏ ‎‡9 1‏
946 ‎‡a b‏ ‎‡9 1‏
996 ‎‡2 DNB|1138368156‏
996 ‎‡2 ISNI|0000000497210118‏
996 ‎‡2 DNB|1251409458‏
996 ‎‡2 LC|n 86061456‏
996 ‎‡2 LC|nr 90023607‏
996 ‎‡2 LC|no2010148939‏
996 ‎‡2 ISNI|0000000439612645‏
996 ‎‡2 LC|n 2006039898‏
996 ‎‡2 ISNI|0000000383174825‏
996 ‎‡2 CYT|AC000637984‏
996 ‎‡2 ISNI|0000000063865926‏
996 ‎‡2 DNB|1119368375‏
996 ‎‡2 PLWABN|9811791164605606‏
996 ‎‡2 DNB|125318495X‏
996 ‎‡2 SZ|1138368156‏
996 ‎‡2 BIBSYS|90846895‏
996 ‎‡2 LC|nr 92007768‏
996 ‎‡2 DNB|1294213881‏
996 ‎‡2 ISNI|0000000497860372‏
996 ‎‡2 BNF|15516402‏
996 ‎‡2 LC|nr 99013720‏
996 ‎‡2 CYT|AC000000554‏
996 ‎‡2 ISNI|0000000063235369‏
996 ‎‡2 DNB|1177058472‏
996 ‎‡2 ISNI|0000000061050483‏
996 ‎‡2 NUKAT|n 2022061224‏
996 ‎‡2 ISNI|000000005437974X‏
996 ‎‡2 CAOONL|ncf10568249‏
996 ‎‡2 ISNI|000000007732897X‏
996 ‎‡2 LC|n 93033458‏
996 ‎‡2 DNB|1280447281‏
996 ‎‡2 LC|n 84073917‏
996 ‎‡2 ISNI|0000000077320310‏
996 ‎‡2 DNB|1191435555‏
996 ‎‡2 BNF|15629687‏
996 ‎‡2 ISNI|0000000063376268‏
996 ‎‡2 SUDOC|244201226‏
996 ‎‡2 ISNI|0000000064297393‏
996 ‎‡2 BNF|14117027‏
996 ‎‡2 LC|no2015171567‏
996 ‎‡2 DNB|1329185862‏
996 ‎‡2 CYT|AC000661837‏
996 ‎‡2 ISNI|0000000063677853‏
996 ‎‡2 LC|n 88238319‏
996 ‎‡2 PLWABN|9810643642805606‏
996 ‎‡2 CYT|AC000619936‏
996 ‎‡2 SELIBR|273445‏
996 ‎‡2 DNB|1207417998‏
996 ‎‡2 LC|nr 91040979‏
996 ‎‡2 LC|nr 92019793‏
996 ‎‡2 ISNI|0000000122782873‏
996 ‎‡2 DNB|1116436310‏
996 ‎‡2 DNB|1012921557‏
996 ‎‡2 ISNI|0000000446250486‏
996 ‎‡2 LC|n 2023183549‏
996 ‎‡2 NTA|376017082‏
996 ‎‡2 LC|n 2021050604‏
996 ‎‡2 LC|no2024067478‏
996 ‎‡2 LC|n 85347260‏
996 ‎‡2 NTA|314345272‏
996 ‎‡2 ISNI|0000000109650999‏
996 ‎‡2 DNB|171918304‏
996 ‎‡2 ISNI|0000000063671013‏
996 ‎‡2 NSK|000529020‏
996 ‎‡2 NSK|000523656‏
996 ‎‡2 LC|n 98067602‏
996 ‎‡2 DNB|1034798936‏
996 ‎‡2 LC|n 78066121‏
996 ‎‡2 LC|nr 97010388‏
996 ‎‡2 SUDOC|191474339‏
996 ‎‡2 ISNI|0000000063666396‏
996 ‎‡2 LC|n 2017045657‏
996 ‎‡2 CYT|AC000374420‏
996 ‎‡2 ISNI|0000000497252764‏
996 ‎‡2 ISNI|0000000063607249‏
996 ‎‡2 ISNI|000000007331639X‏
996 ‎‡2 NII|DA18471801‏
996 ‎‡2 BNF|15578995‏
996 ‎‡2 CYT|AC000207607‏
996 ‎‡2 CYT|AC000661745‏
996 ‎‡2 ISNI|0000000368528816‏
996 ‎‡2 ISNI|0000000512433265‏
996 ‎‡2 LC|no2001075239‏
996 ‎‡2 LC|n 2003069996‏
996 ‎‡2 DNB|1041238398‏
996 ‎‡2 LC|n 2016011867‏
996 ‎‡2 DNB|1129292843‏
996 ‎‡2 BIBSYS|8070384‏
996 ‎‡2 ISNI|0000000053619764‏
996 ‎‡2 LC|n 86002117‏
996 ‎‡2 CYT|AC000214355‏
996 ‎‡2 ISNI|0000000123586575‏
996 ‎‡2 DNB|1088450822‏
996 ‎‡2 ISNI|0000000080062009‏
996 ‎‡2 DNB|1030110530‏
996 ‎‡2 LIH|LNB:B_b_E_o_;=B_o_‏
996 ‎‡2 ISNI|000000006421261X‏
996 ‎‡2 LC|nr 95029803‏
996 ‎‡2 LC|no2006106065‏
996 ‎‡2 LC|n 82030933‏
996 ‎‡2 LC|no2019085644‏
996 ‎‡2 LC|nr 95003601‏
996 ‎‡2 B2Q|0000333491‏
996 ‎‡2 ISNI|0000000063390174‏
996 ‎‡2 LC|no2020083870‏
996 ‎‡2 NII|DA12924528‏
996 ‎‡2 DBC|87097946326717‏
996 ‎‡2 LC|nr2001013104‏
996 ‎‡2 ISNI|0000000382262786‏
996 ‎‡2 SUDOC|130345490‏
996 ‎‡2 ISNI|0000000064313760‏
996 ‎‡2 SUDOC|194646297‏
996 ‎‡2 CYT|AC000655323‏
996 ‎‡2 ISNI|0000000040037132‏
996 ‎‡2 LC|n 80146898‏
996 ‎‡2 ISNI|0000000097719900‏
996 ‎‡2 DNB|1191733432‏
996 ‎‡2 LC|n 2018043653‏
996 ‎‡2 CAOONL|ncf10073181‏
996 ‎‡2 NLR|RU NLR AUTH 770220383‏
996 ‎‡2 DNB|1156636728‏
996 ‎‡2 LC|no2017004773‏
996 ‎‡2 LC|n 2012013822‏
996 ‎‡2 SUDOC|146229215‏
996 ‎‡2 ISNI|0000000456642328‏
996 ‎‡2 ISNI|0000000371572826‏
996 ‎‡2 DNB|111469150X‏
996 ‎‡2 LC|n 84022434‏
996 ‎‡2 LC|no2020065178‏
996 ‎‡2 BNF|16161515‏
996 ‎‡2 LC|no2008016603‏
996 ‎‡2 LC|n 86100238‏
996 ‎‡2 DNB|1211688429‏
996 ‎‡2 CYT|AC000236880‏
996 ‎‡2 NTA|419831487‏
996 ‎‡2 DNB|1152394584‏
996 ‎‡2 SUDOC|051972948‏
996 ‎‡2 LC|n 2017006373‏
996 ‎‡2 BNF|17026359‏
996 ‎‡2 CAOONL|ncf11497273‏
996 ‎‡2 ISNI|000000006423021X‏
996 ‎‡2 SUDOC|164316663‏
996 ‎‡2 CYT|AC000661784‏
996 ‎‡2 CYT|AC000635762‏
996 ‎‡2 PLWABN|9810552097305606‏
996 ‎‡2 LC|n 85219981‏
996 ‎‡2 NTA|148279597‏
996 ‎‡2 ISNI|0000000084428063‏
996 ‎‡2 PLWABN|9813175075705606‏
996 ‎‡2 CYT|AC000652890‏
996 ‎‡2 LC|n 85091620‏
996 ‎‡2 ISNI|000000006377758X‏
996 ‎‡2 ISNI|0000000063654299‏
996 ‎‡2 LC|no2002043607‏
996 ‎‡2 PLWABN|9810597558905606‏
996 ‎‡2 ISNI|0000000115187443‏
996 ‎‡2 ISNI|0000000084877061‏
996 ‎‡2 DNB|1045660167‏
996 ‎‡2 NTA|341040479‏
996 ‎‡2 DNB|1232730890‏
996 ‎‡2 PLWABN|9810577445505606‏
996 ‎‡2 NTA|292066120‏
996 ‎‡2 ISNI|000000006341608X‏
996 ‎‡2 ISNI|0000000048511708‏
996 ‎‡2 NII|DA13553578‏
996 ‎‡2 DNB|1068022485‏
996 ‎‡2 BIBSYS|1542227318496‏
996 ‎‡2 LC|nr 94021071‏
996 ‎‡2 CYT|AC000368425‏
996 ‎‡2 LC|no2011026884‏
996 ‎‡2 ISNI|0000000084324571‏
996 ‎‡2 DNB|1158963971‏
996 ‎‡2 CYT|AC000008141‏
996 ‎‡2 SUDOC|280414471‏
996 ‎‡2 DNB|117997378X‏
996 ‎‡2 LC|n 86007776‏
996 ‎‡2 NUKAT|n 2017004487‏
996 ‎‡2 ISNI|0000000457208531‏
996 ‎‡2 CYT|AC000619077‏
996 ‎‡2 DNB|1196373221‏
996 ‎‡2 DBC|87097969819214‏
996 ‎‡2 BIBSYS|98009305‏
996 ‎‡2 LC|no2009069782‏
996 ‎‡2 DNB|1318429676‏
996 ‎‡2 ISNI|0000000382422698‏
996 ‎‡2 NKC|utb20191023321‏
996 ‎‡2 LC|n 50079079‏
996 ‎‡2 ISNI|0000000366736451‏
996 ‎‡2 DBC|87097962146354‏
996 ‎‡2 LC|n 2024007343‏
996 ‎‡2 LC|no2001013978‏
996 ‎‡2 DNB|1285321758‏
996 ‎‡2 LC|n 83066371‏
996 ‎‡2 ISNI|0000000109587299‏
996 ‎‡2 ISNI|0000000072684545‏
996 ‎‡2 DNB|1050671503‏
996 ‎‡2 SUDOC|193040832‏
996 ‎‡2 J9U|987007394772605171‏
996 ‎‡2 DNB|107577194‏
996 ‎‡2 NDL|00715871‏
996 ‎‡2 LC|no2013107908‏
996 ‎‡2 LC|n 2012182366‏
996 ‎‡2 LC|no2022083477‏
996 ‎‡2 ISNI|0000000064070527‏
996 ‎‡2 DNB|1207949280‏
996 ‎‡2 RERO|A027737374‏
996 ‎‡2 ISNI|0000000367433989‏
996 ‎‡2 NTA|338226125‏
996 ‎‡2 SUDOC|139775323‏
996 ‎‡2 DNB|135368499‏
996 ‎‡2 CAOONL|ncf12056798‏
996 ‎‡2 CAOONL|ncf12029855‏
996 ‎‡2 J9U|987007446785405171‏
996 ‎‡2 LC|no2006016697‏
996 ‎‡2 BNF|13611461‏
996 ‎‡2 ISNI|0000000454949908‏
996 ‎‡2 ISNI|0000000063486811‏
996 ‎‡2 BIBSYS|4049109‏
996 ‎‡2 PLWABN|9810590626105606‏
996 ‎‡2 LC|nr 90025050‏
996 ‎‡2 LC|no2014126236‏
996 ‎‡2 ISNI|0000000077314359‏
996 ‎‡2 CYT|AC000565369‏
996 ‎‡2 LC|no2022114577‏
996 ‎‡2 LC|no2014059214‏
996 ‎‡2 ISNI|0000000430417018‏
996 ‎‡2 DNB|1120531853‏
996 ‎‡2 LC|n 2017054342‏
996 ‎‡2 LC|n 82237745‏
996 ‎‡2 ISNI|0000000063943832‏
996 ‎‡2 PLWABN|9811768076605606‏
996 ‎‡2 ISNI|0000000064332013‏
996 ‎‡2 LC|n 85307496‏
996 ‎‡2 J9U|987007395909105171‏
996 ‎‡2 CYT|AC000214476‏
996 ‎‡2 PLWABN|9810580130405606‏
996 ‎‡2 CYT|AC000633345‏
996 ‎‡2 LC|n 83124831‏
996 ‎‡2 ISNI|0000000082221560‏
996 ‎‡2 SUDOC|055820719‏
996 ‎‡2 ISNI|0000000063500249‏
996 ‎‡2 ISNI|0000000063674193‏
996 ‎‡2 PLWABN|9810627112105606‏
996 ‎‡2 ISNI|0000000060022376‏
996 ‎‡2 NTA|183933648‏
996 ‎‡2 LC|n 2017053783‏
996 ‎‡2 LC|no2014151742‏
996 ‎‡2 LC|no2009079179‏
996 ‎‡2 ISNI|0000000050758646‏
996 ‎‡2 LC|no2011184981‏
997 ‎‡a 0 0 lived 0 0‏ ‎‡9 1‏
998 ‎‡a Lu, Wei‏ ‎‡2 ISNI|0000000446250486‏ ‎‡3 suggested‏
998 ‎‡a Wei, Lu‏ ‎‡2 CAOONL|ncf11610416‏ ‎‡3 exact name‏
998 ‎‡a Lu, Wei‏ ‎‡q (Wei D.)‏ ‎‡2 LC|no2015023730‏ ‎‡3 suggested‏ ‎‡3 exact title: (1.00, 'semiconductornanowires', 'semiconductornanowires')‏
998 ‎‡a Wei, Lu.‏ ‎‡2 NUKAT|n 2021049429‏ ‎‡3 exact name‏
998 ‎‡a Lu, Wei‏ ‎‡2 SUDOC|099801019‏ ‎‡3 title: (0.71, 'semiconductornanowiresfromnextgenerationelectronicstosustainableenergy', 'semiconductornanowires')‏
998 ‎‡a Wei, Lu‏ ‎‡2 J9U|987007430435505171‏ ‎‡3 exact name‏
998 ‎‡a Lu, Wei‏ ‎‡2 SZ|1024210839‏ ‎‡3 standard number‏
998 ‎‡a Lu, Wei‏ ‎‡c (fizyk)‏ ‎‡2 PLWABN|9811768076605606‏ ‎‡3 viafid‏
998 ‎‡a Wei, Lu‏ ‎‡2 BIBSYS|3099692‏ ‎‡3 exact name‏
998 ‎‡a Lu, Wei‏ ‎‡2 DNB|1024210839‏ ‎‡3 suggested‏ ‎‡3 standard number‏