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    产品型号HY57V161610DTC-8的Datasheet PDF文件预览

    HY57V161610D  
    2 Banks x 512K x 16 Bit Synchronous DRAM  
    DESCRIPTION  
    THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic  
    applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16.  
    HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized  
    with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output  
    voltage levels are compatible with LVTTL.  
    Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number of consecutive read or write cycles initi-  
    ated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A  
    burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a  
    new burst read or write command on any cycle. (This pipeline design is not restricted by a `2N` rule.)  
    FEATURES  
    •
    •
    •
    Auto refresh and self refresh  
    •
    •
    •
    Single 3.0V to 3.6V power supply  
    4096 refresh cycles / 64ms  
    All device pins are compatible with LVTTL interface  
    Programmable Burst Length and Burst Type  
    - 1, 2, 4, 8 and Full Page for Sequence Burst  
    - 1, 2, 4 and 8 for Interleave Burst  
    Programmable CAS Latency ; 1, 2, 3 Clocks  
    JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin  
    pitch  
    •
    All inputs and outputs referenced to positive edge of system  
    clock  
    •
    •
    •
    Data mask function by UDQM/LDQM  
    Internal two banks operation  
    ORDERING INFORMATION  
    Part No.  
    Clock Frequency  
    Organization  
    Interface  
    Package  
    HY57V161610DTC-5  
    HY57V161610DTC-55  
    HY57V161610DTC-6  
    HY57V161610DTC-7  
    HY57V161610DTC-8  
    HY57V161610DTC-10  
    HY57V161610DTC-15  
    200MHz  
    183MHz  
    166MHz  
    143MHz  
    125MHz  
    100MHz  
    66MHz  
    400mil  
    50pin TSOP II  
    2Banks x 512Kbits x 16  
    LVTTL  
    Note :  
    1. VDD(min) of HY57V161610DTC-5/55 is 3.15V  
    This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for  
    use of circuits described. No patent licenses are implied  
    Rev. 4.0/Aug. 02  
    1
    HY57V161610D  
    PIN CONFIGURATION  
    VDD  
    DQ0  
    DQ1  
    VSSQ  
    DQ2  
    DQ3  
    VSS  
    DQ15  
    DQ14  
    VSSQ  
    DQ13  
    DQ12  
    VDDQ  
    VDDQ  
    DQ11  
    DQ10  
    VSSQ  
    DQ9  
    DQ4  
    DQ5  
    VSSQ  
    DQ6  
    DQ7  
    VDDQ  
    LDQM  
    /WE  
    /CAS  
    /RAS  
    /CS  
    DQ8  
    VDDQ  
    NC  
    UDQM  
    CLK  
    CKE  
    NC  
    A9  
    A8  
    A7  
    A6  
    A5  
    A4  
    A11  
    A10  
    A0  
    A1  
    A2  
    A3  
    VDD  
    VSS  
    PIN DESCRIPTION  
    PIN  
    PIN NAME  
    DESCRIPTION  
    The system clock input. All other inputs are referenced to the SDRAM on the rising  
    edge of CLK.  
    CLK  
    CKE  
    Clock  
    Controls internal clock signal and when deactivated, the SDRAM will be one of the  
    states among power down, suspend or self refresh.  
    Clock Enable  
    CS  
    BA  
    Chip Select  
    Command input enable or mask except CLK, CKE and DQM  
    Select either one of banks during both RAS and CAS activity.  
    Bank Address  
    Row Address : RA0 ~ RA10, Column Address : CA0 ~ CA7  
    Auto-precharge flag : A10  
    A0 ~ A10  
    Address  
    Row Address Strobe,  
    Column Address Strobe, Write  
    Enable  
    RAS, CAS and WE define the operation.  
    Refer function truth table for details  
    RAS, CAS, WE  
    LDQM, UDQM  
    DQ0 ~ DQ15  
    VDD/VSS  
    Data Input/Output Mask  
    Data Input/Output  
    DQM control output buffer in read mode and mask input data in write mode  
    Multiplexed data input / output pin  
    Power Supply/Ground  
    Data Output Power/Ground  
    No Connection  
    Power supply for internal circuit and input buffer  
    Power supply for DQ  
    VDDQ/VSSQ  
    NC  
    No connection  
    Rev. 4.0/Aug. 02  
    2
    HY57V161610D  
    FUNCTIONAL BLOCK DIAGRAM  
    1Mx16 Synchronous DRAM  
    Self Refresh Counter  
    Refresh  
    Interval Timer  
    Refresh  
    Counter  
    512Kx16  
    Bank 0  
    Address[0:10]  
    Sense AMP & I/O gates  
    Column Decoder  
    DQ0  
    DQ1  
    DQ2  
    DQ3  
    CLK  
    CKE  
    Address  
    Register  
    Precharge  
    Row Active  
    BA(A11)  
    DQ4  
    DQ5  
    DQ6  
    DQ7  
    DQ8  
    Column Addr.  
    Latch & Counter  
    Column Active  
    CS  
    RAS  
    CAS  
    WE  
    Overflow  
    Burst Length  
    Counter  
    DQ9  
    DQ10  
    DQ11  
    DQ12  
    DQ13  
    DQ14  
    DQ15  
    UDQM  
    LDQM  
    Column Decoder  
    Sense AMP & I/O gates  
    512Kx16  
    Bank 1  
    Mode Register  
    Test Mode  
    I/O Control  
    Rev. 4.0/Aug. 02  
    3
    HY57V161610D  
    ABSOLUTE MAXIMUM RATINGS  
    Parameter  
    Symbol  
    Rating  
    Unit  
    Ambient Temperature  
    TA  
    0 ~ 70  
    -55 ~ 125  
    -1.0 ~ 4.6  
    -1.0 ~ 4.6  
    50  
    °C  
    Storage Temperature  
    TSTG  
    °C  
    Voltage on Any Pin relative to VSS  
    Voltage on VDD relative to VSS  
    Short Circuit Output Current  
    Power Dissipation  
    VIN, VOUT  
    VDD  
    V
    V
    IOS  
    mA  
    W
    PD  
    1
    Soldering Temperature·Time  
    TSOLDER  
    260·10  
    °C ·Sec  
    Note : Operation at above absolute maximum rating can adversely affect device reliability.  
    DC OPERATING CONDITION (TA=0°C to 70°C)  
    Parameter  
    Power Supply Voltage  
    Input high voltage  
    Symbol  
    VDD, VDDQ  
    Min  
    3.0  
    Typ.  
    3.3  
    3.0  
    0
    Max  
    3.6  
    Unit  
    V
    Note  
    1, 2, 3  
    1, 4  
    VIH  
    VIL  
    2.0  
    VDD + 0.3  
    0.8  
    V
    Input low voltage  
    -0.5  
    V
    1, 5  
    Note :  
    1.All voltages are referenced to VSS = 0V.  
    2.VDD(min) is 3.15V when HY57V161610DTC-7 operates at CAS latency=2  
    3.VDD(min) of HY57V161610DTC-5/55 is 3.15V  
    4.VIH(max) is acceptable 4.6V AC pulse width with ≤ 10ns of duration.  
    5.VIL(min) is acceptable -1.5V AC pulse width with ≤ 10ns of duration.  
    AC OPERATING CONDITION (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0V)  
    Parameter  
    AC input high / low level voltage  
    Symbol  
    VIH / VIL  
    Vtrip  
    Value  
    2.4/0.4  
    1.4  
    Unit  
    V
    Note  
    Input timing measurement reference level voltage  
    Input rise / fall time  
    V
    tR / tF  
    Voutref  
    CL  
    1
    ns  
    V
    Output timing measurement reference level  
    Output load capacitance for access time measurement  
    1.4  
    30  
    pF  
    1
    Note :  
    1. Output load to measure access times is equivalent to two TTL gates and one capacitance(30pF).  
    For details, refer to AC/DC output load circuit.  
    2. VDD(min) is 3.15V when HY57V161610DTC-7 operates at CAS latency=2 and tCK2=8.9ns  
    3. VDD(min) of HY57V161610DTC-5/55 is 3.15V‘  
    Rev. 4.0/Aug. 02  
    4
    HY57V161610D  
    CAPACITANCE (TA=25°C, f=1MHz)  
    Parameter  
    Pin  
    Symbol  
    CI1  
    Min  
    2.5  
    2.5  
    Max  
    4
    Unit  
    pF  
    CLK  
    A0 ~ A10, BA  
    Input capacitance  
    CI2  
    5
    pF  
    CKE, CS, RAS, CAS, WE, UDQM, LDQM  
    Data input / output capacitance  
    DQ0 ~ DQ15  
    CI/O  
    4
    6.5  
    pF  
    OUTPUT LOAD CIRCUIT  
    Vtt=1.4V  
    RT=250 Ω  
    Output  
    Output  
    30pF  
    30pF  
    DC Output Load Circuit  
    AC Output Load Circuit  
    DC CHARACTERISTICS I (TA=0°C to 70°C)  
    Parameter  
    Power Supply Voltage  
    Input leakage current  
    Output leakage current  
    Output high voltage  
    Output low voltage  
    Symbol  
    Min.  
    3.0  
    -1  
    Max  
    3.6  
    1
    Unit  
    Note  
    VDD  
    IL  
    V
    uA  
    uA  
    V
    1, 2  
    3
    IO  
    -1  
    1
    4
    VOH  
    VOL  
    2.4  
    -
    -
    IOH = -4mA  
    IOL =+4mA  
    0.4  
    V
    Note :  
    1.VDD(min) is 3.15V when HY57V161610DTC-7 operates at CAS latency=2 and tCK2=8.9ns.  
    2.VDD(min) of HY57V161610DTC-5/55 is 3.15V  
    3.VIN = 0 to 3.6V, All other pins are not under test = 0V  
    4.DOUT is disabled, VOUT=0 to 3.6V  
    Rev. 4.0/Aug. 02  
    5
    HY57V161610D  
    DC CHARACTERISTICS II (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0VNote1,2  
    )
    Speed  
    -7  
    Parameter  
    Symbol  
    Test Condition  
    Unit  
    mA  
    Note  
    -5  
    -55  
    -6  
    -8  
    -10  
    -15  
    Burst Length=1, One bank active  
    tRAS ≥ tRAS(min),tRP ≥ tRP(min),  
    IO=0mA  
    Operating Current  
    IDD1  
    130  
    130  
    120  
    110  
    110  
    110  
    100  
    2
    1
    1
    IDD2P  
    CKE ≤ VIL(max), tCK = min.  
    CKE ≤ VIL(max), tCK = ∞  
    Precharge Standby  
    Current  
    in power down mode  
    mA  
    IDD2PS  
    CKE ≥ VIH(min), CS ≥ VIH(min), tCK =  
    min  
    Input signals are changed one time  
    during 2Clks. All other pins ≥ VDD-0.2V  
    or ≤ 0.2V  
    IDD2N  
    20  
    Precharge Standby  
    Current  
    in non power down  
    mode  
    mA  
    mA  
    mA  
    CKE ≥ VIH(min), tCK = ∞  
    Input signals are stable.  
    IDD2NS  
    15  
    IDD3P  
    3.0  
    3.0  
    CKE ≤ VIL(max), tCK = min  
    CKE ≤ VIL(max), tCK = ∞  
    Active Standby Current  
    in power down mode  
    IDD3PS  
    CKE ≥ VIH(min), CS ≥ VIH(min), tCK =  
    min  
    Input signals are changed one time  
    during 2CLKs. All other pins ≥ VDD-  
    0.2V or ≤ 0.2V  
    IDD3N  
    IDD3NS  
    IDD4  
    50  
    Active Standby Current  
    in non power down  
    mode  
    CKE ≥ VIH(min), tCK = ∞  
    Input signals are stable  
    30  
    CL=3  
    130  
    130  
    120  
    110  
    -
    110  
    110  
    -
    110  
    90  
    -
    80  
    -
    tCK ≥ tCK(min),  
    Burst Mode Operating  
    Current  
    tRAS ≥ tRAS(min),  
    CL=2  
    -
    -
    -
    -
    -
    -
    mA  
    3
    IO=0mA  
    All banks active  
    CL=1  
    -
    70  
    100  
    Auto Refresh Current  
    Self Refresh Current  
    IDD5  
    IDD6  
    tRRC ≥ tRRC(min), All banks active  
    CKE ≤ 0.2V  
    130  
    130  
    110  
    110  
    110  
    110  
    mA  
    mA  
    2
    Note :  
    1.VDD(min) is 3.15V when HY57V161610DTC-7 operates at CAS latency=2 and tCK2=8.9ns.  
    2.VDD(min) of HY57V161610DTC-5/55 is 3.15V  
    3.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.  
    Rev. 4.0/Aug. 02  
    6
    HY57V161610D  
    AC CHARACTERISTICS (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0VNote1,2  
    )
    -5  
    -55  
    -6  
    -7  
    Parameter  
    Symbol  
    Unit  
    Note  
    Min  
    Max  
    Min  
    Max  
    Min  
    6
    Max  
    Min  
    7
    Max  
    CL=3  
    tCK3  
    tCK2  
    tCK1  
    tCHW  
    tCLW  
    tAC3  
    tAC2  
    tAC1  
    tOH  
    5
    -
    5.5  
    -
    -
    -
    -
    -
    -
    -
    -
    6
    6
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    System clock  
    cycle time  
    CL=2  
    CL=1  
    10  
    -
    10  
    -
    ns  
    3
    -
    -
    -
    Clock high pulse width  
    Clock low pulse width  
    CL=3  
    1.75  
    1.75  
    2
    2
    -
    2.5  
    2.5  
    -
    ns  
    ns  
    4
    4
    2
    2
    -
    4.5  
    5
    -
    5.5  
    6
    -
    Access time  
    CL=2  
    -
    -
    ns  
    3
    from clock  
    CL=1  
    Data-out hold time  
    Data-Input setup time  
    Data-Input hold time  
    Address setup time  
    Address hold time  
    CKE setup time  
    -
    -
    1.5  
    1.5  
    1
    2
    1.5  
    1
    2
    -
    2.5  
    1.75  
    1
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    tDS  
    1.5  
    1
    -
    4
    4
    4
    4
    4
    4
    4
    4
    tDH  
    -
    tAS  
    1.5  
    1
    1.5  
    1
    1.5  
    1
    -
    1.75  
    1
    tAH  
    -
    tCKS  
    tCKH  
    tCS  
    1.5  
    1
    1.5  
    1
    1.5  
    1
    -
    1.75  
    1
    CKE hold time  
    -
    Command setup time  
    Command hold time  
    1.5  
    1
    1.5  
    1
    1.5  
    1
    -
    1.75  
    1
    tCH  
    -
    CLK to data output in low Z-  
    time  
    tOLZ  
    tOHZ  
    2
    2
    2
    2
    2
    2
    -
    2
    2
    -
    ns  
    ns  
    CLK to data output in high  
    Z-time  
    5
    5.5  
    6
    7
    Rev. 4.0/Aug. 02  
    7
    HY57V161610D  
    AC CHARACTERISTICS (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0VNote1,2  
    )
    - continued -  
    -8  
    -10  
    -15  
    Parameter  
    Symbol  
    Unit  
    Note  
    Min  
    8
    Max  
    Min  
    10  
    12  
    -
    Max  
    Min  
    15  
    15  
    15  
    3
    Max  
    CL=3  
    tCK3  
    tCK2  
    tCK1  
    tCHW  
    tCLW  
    tAC3  
    tAC2  
    tAC1  
    tOH  
    -
    -
    -
    -
    -
    -
    System clock cycle  
    time  
    CL=2  
    CL=1  
    12  
    -
    ns  
    3
    -
    -
    -
    Clock high pulse width  
    Clock low pulse width  
    3
    -
    3
    -
    -
    ns  
    ns  
    4
    4
    3
    -
    3
    -
    3
    -
    CL=3  
    CL=2  
    CL=1  
    -
    6
    6
    -
    -
    7
    7
    -
    -
    7
    7
    14  
    -
    Access time from  
    clock  
    -
    -
    -
    ns  
    3
    -
    -
    -
    Data-out hold time  
    Data-Input setup time  
    Data-Input hold time  
    Address setup time  
    Address hold time  
    CKE setup time  
    2.5  
    2
    -
    2.5  
    2.5  
    1
    -
    2.5  
    2.5  
    1
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    ns  
    tDS  
    -
    -
    -
    4
    4
    4
    4
    4
    4
    4
    4
    tDH  
    1
    -
    -
    -
    tAS  
    2
    -
    2.5  
    1
    -
    2.5  
    1
    -
    tAH  
    1
    -
    -
    -
    tCKS  
    tCKH  
    tCS  
    2
    -
    2.5  
    1
    -
    2.5  
    1
    -
    CKE hold time  
    1
    -
    -
    -
    Command setup time  
    Command hold time  
    2
    -
    2.5  
    1
    -
    2.5  
    1
    -
    tCH  
    1
    -
    -
    -
    CLK to data output in low Z-time  
    CLK to data output in high Z-time  
    tOLZ  
    tOHZ  
    2
    -
    2
    -
    2
    -
    2
    8
    3
    10  
    3
    15  
    Note :  
    1.VDD(min) is 3.15V when HY57V161610DTC-7 operates at CAS latency=2 and tCK2=8.9ns.  
    2.VDD(min) of HY57V161610DTC-5/55 is 3.15V  
    3.tCK2 is 8.9ns only when tAC2 is 7.9ns in HY57V161610DTC-6 and HY57V161610DTC-7.  
    4.Assume tR / tF (input rise and fall time ) is 1ns.  
    Rev. 4.0/Aug. 02  
    8
    HY57V161610D  
    AC CHARACTERISTICS (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0VNote1,2))  
    -5  
    -55  
    -6  
    -7  
    Paramter  
    Symbol  
    Unit  
    Note  
    Min  
    55  
    55  
    15  
    40  
    3
    Max  
    Min  
    55  
    55  
    16.5  
    38.5  
    3
    Max  
    Min  
    60  
    60  
    18  
    40  
    3
    Max  
    Min  
    70  
    70  
    20  
    45  
    3
    Max  
    Operation  
    Auto Refresh  
    tRC  
    tRRC  
    tRCD  
    tRAS  
    tRP  
    -
    -
    ns  
    RAS cycle time  
    -
    -
    ns  
    RAS to CAS delay  
    RAS active time  
    -
    -
    ns  
    100K  
    100K  
    100K  
    100K  
    ns  
    RAS precharge time  
    -
    -
    -
    -
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    ms  
    RAS to RAS bank active delay  
    CAS to CAS bank active delay  
    Write command to data-in delay  
    Data-in to precharge command  
    Data-in to active command  
    DQM to data-in Hi-Z  
    tRRD  
    tCCD  
    tWTL  
    tDPL  
    tDAL  
    tDQZ  
    tDQM  
    tMRD  
    tPROZ  
    tPDE  
    tSRE  
    tREF  
    2
    2
    2
    2
    1
    1
    1
    -
    1
    -
    0
    0
    0
    -
    0
    -
    1
    1
    1
    -
    1
    -
    4
    4
    4
    -
    4
    -
    2
    2
    2
    -
    2
    -
    DQM to data mask  
    0
    0
    0
    -
    0
    -
    MRS to new command  
    Precharge to data output Hi-Z  
    Power down exit time  
    2
    2
    2
    -
    2
    -
    3
    3
    3
    -
    3
    -
    1
    1
    1
    -
    1
    -
    Self refresh exit time  
    1
    1
    1
    -
    1
    -
    3
    Refresh Time  
    64  
    64  
    -
    64  
    -
    64  
    Rev. 4.0/Aug. 02  
    9
    HY57V161610D  
    AC CHARACTERISTICS (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0VNote1,2  
    )
    - continued -  
    -8  
    -10  
    -15  
    Paramter  
    Symbol  
    Unit  
    Note  
    Min  
    70  
    70  
    20  
    45  
    3
    Max  
    Min  
    70  
    80  
    20  
    45  
    2
    Max  
    Min  
    70  
    80  
    20  
    45  
    2
    Max  
    Operation  
    Auto Refresh  
    tRC  
    tRRC  
    tRCD  
    tRAS  
    tRP  
    -
    -
    -
    ns  
    RAS cycle time  
    -
    -
    -
    ns  
    RAS to CAS delay  
    RAS active time  
    -
    -
    -
    ns  
    100K  
    100K  
    100K  
    ns  
    RAS precharge time  
    -
    -
    -
    -
    -
    -
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    CLK  
    ms  
    RAS to RAS bank active delay  
    CAS to CAS bank active delay  
    Write command to data-in delay  
    Data-in to precharge command  
    Data-in to active command  
    DQM to data-in Hi-Z  
    tRRD  
    tCCD  
    tWTL  
    tDPL  
    tDAL  
    tDQZ  
    tDQM  
    tMRD  
    tPROZ  
    tPDE  
    tSRE  
    tREF  
    2
    2
    2
    1
    -
    1
    -
    1
    -
    0
    -
    0
    -
    0
    -
    1
    -
    1
    -
    1
    -
    4
    -
    3
    -
    3
    -
    2
    -
    2
    -
    2
    -
    DQM to data mask  
    0
    -
    0
    -
    0
    -
    MRS to new command  
    Precharge to data output Hi-Z  
    Power down exit time  
    2
    -
    2
    -
    2
    -
    3
    -
    3
    -
    3
    -
    1
    -
    1
    -
    1
    -
    Self refresh exit time  
    1
    -
    1
    -
    1
    -
    3
    Refresh Time  
    -
    64  
    -
    64  
    -
    64  
    Note :  
    1. VDD(min) is 3.15V when HY57V161610DTC-7 operates at CAS latency=2 and tCK2=8.9ns.  
    2.VDD(min) of HY57V161610DTC-5/55 is 3.15V  
    3. A new command can be given tRRC after self refresh exit.  
    DEVICE OPERATING OPTION TABLE  
    HY57V161610DTC-5  
    CAS Latency  
    3CLKs  
    tRCD  
    3CLKs  
    3CLKs  
    3CLKs  
    tRAS  
    8CLKs  
    7CLKs  
    7CLKs  
    tRC  
    tRP  
    tAC  
    4.5ns  
    5ns  
    tOH  
    200MHz  
    183MHz  
    166MHz  
    11CLKs  
    10CLKs  
    10CLKs  
    3CLKs  
    3CLKs  
    3CLKs  
    1.5ns  
    2ns  
    3CLKs  
    3CLKs  
    5.5ns  
    2ns  
    Rev. 4.0/Aug. 02  
    10  
    HY57V161610D  
    HY57V161610DTC-55  
    CAS Latency  
    tRCD  
    3CLKs  
    3CLKs  
    3CLKs  
    tRAS  
    7CLKs  
    7CLKs  
    7CLKs  
    tRC  
    tRP  
    tAC  
    5ns  
    tOH  
    2ns  
    183MHz  
    166MHz  
    143MHz  
    3CLKs  
    3CLKs  
    3CLKs  
    10CLKs  
    10CLKs  
    10CLKs  
    3CLKs  
    3CLKs  
    3CLKs  
    5.5ns  
    5.5ns  
    2ns  
    2.5ns  
    HY57V161610DTC-6  
    CAS Latency  
    tRCD  
    3CLKs  
    3CLKs  
    2CLKs  
    tRAS  
    7CLKs  
    7CLKs  
    6CLKs  
    tRC  
    tRP  
    tAC  
    5.5ns  
    5.5ns  
    6ns  
    tOH  
    2ns  
    166MHz  
    143MHz  
    125MHz  
    3CLKs  
    3CLKs  
    3CLKs  
    10CLKs  
    10CLKs  
    9CLKs  
    3CLKs  
    3CLKs  
    3CLKs  
    2.5ns  
    2.5ns  
    HY57V161610DTC-7  
    CAS Latency  
    tRCD  
    3CLKs  
    3CLKs  
    2CLKs  
    tRAS  
    7CLKs  
    6CLKs  
    5CLKs  
    tRC  
    tRP  
    tAC  
    5.5ns  
    6ns  
    tOH  
    143MHz  
    125MHz  
    100MHz  
    3CLKs  
    3CLKs  
    2CLKs  
    10CLKs  
    9CLKs  
    7CLKs  
    3CLKs  
    3CLKs  
    2CLKs  
    2.5ns  
    2.5ns  
    2.5ns  
    7ns  
    HY57V161610DTC-8  
    CAS Latency  
    tRCD  
    3CLKs  
    2CLKs  
    2CLKs  
    tRAS  
    6CLKs  
    5CLKs  
    4CLKs  
    tRC  
    tRP  
    tAC  
    6ns  
    7ns  
    7ns  
    tOH  
    125MHz  
    100MHz  
    83MHz  
    3CLKs  
    3CLKs  
    2CLKs  
    9CLKs  
    7CLKs  
    6CLKs  
    3CLKs  
    2CLKs  
    2CLKs  
    2.5ns  
    2.5ns  
    2.5ns  
    HY57V161610DTC-10  
    CAS Latency  
    tRCD  
    2CLKs  
    2CLKs  
    tRAS  
    5CLKs  
    4CLKs  
    tRC  
    tRP  
    tAC  
    7ns  
    7ns  
    tOH  
    100MHz  
    83MHz  
    3CLKs  
    2CLKs  
    7CLKs  
    6CLKs  
    2CLKs  
    2CLKs  
    2.5ns  
    2.5ns  
    HY57V161610DTC-15  
    CAS Latency  
    1CLKs  
    tRCD  
    tRAS  
    tRC  
    tRP  
    tAC  
    tOH  
    66MHz  
    2CLKs  
    4CLKs  
    6CLKs  
    2CLKs  
    14ns  
    2.5ns  
    Rev. 4.0/Aug. 02  
    11  
    HY57V161610D  
    COMMAND TRUTH TABLE  
    A10/  
    AP  
    Command  
    Mode Register Set  
    CKEn-1  
    CKEn  
    CS  
    RAS  
    CAS  
    WE  
    DQM  
    A0~A9  
    BA  
    Note  
    H
    H
    H
    H
    X
    L
    H
    L
    L
    X
    H
    L
    L
    X
    H
    H
    L
    X
    H
    H
    X
    OP code  
    No Operation  
    X
    X
    X
    X
    X
    X
    X
    Bank Active  
    L
    Row Address  
    V
    V
    Read  
    L
    H
    L
    Column  
    Address  
    L
    L
    H
    H
    L
    L
    L
    H
    L
    Read with Auto precharge  
    Write  
    Column  
    Address  
    H
    H
    X
    X
    X
    V
    Write with Auto precharge  
    Precharge All Bank  
    Precharge selected Bank  
    Burst Stop  
    H
    H
    L
    X
    V
    X
    X
    L
    L
    H
    H
    L
    L
    X
    H
    H
    H
    H
    X
    L
    X
    V
    X
    X
    U/LDQM  
    X
    X
    Auto Refresh  
    H
    X
    L
    L
    L
    L
    L
    H
    L
    A9 Pin High  
    (Other Pins OP code)  
    Burst-READ-Single-WRITE  
    H
    H
    L
    X
    X
    Entry  
    Exit  
    L
    H
    L
    L
    X
    H
    X
    H
    X
    H
    X
    V
    L
    X
    H
    X
    H
    X
    H
    X
    V
    H
    X
    H
    X
    H
    X
    H
    X
    V
    1
    X
    Self Refresh  
    L
    H
    L
    H
    L
    X
    X
    X
    H
    L
    Entry  
    Exit  
    Precharge power  
    down  
    X
    X
    H
    L
    H
    H
    L
    Entry  
    Exit  
    H
    L
    L
    X
    X
    Clock Suspend  
    H
    X
    Note :  
    1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high.  
    2. X=Do not care, L=Low, H=High, BA=Bank Address, RA= Row Address, CA=Column Address, Opcode=Operand Code,  
    NOP=No Operation.  
    Rev. 4.0/Aug. 02  
    12  
    HY57V161610D  
    PACKAGE INFORMATION  
    400mil 50pin Thin Small Outline Package (TC)  
    1Mx16 Synchronous DRAM  
    UNIT : mm(inch)  
    11.938(0.4700)  
    11.735(0.4620)  
    10.262(0.4040)  
    10.059(0.3960)  
    0.45(0.0177)  
    0.8(0.0315 BSC)  
    0.30(0.0118)  
    1.2(0.0472)  
    1.0(0.0394)  
    0.150(0.0059)  
    0.050(0.0020)  
    21.057(0.8290)  
    20.879(0.8220)  
    0.646 REF  
    GAGE PLANE  
    0~5deg  
    0.210(0.0083)  
    0.120(0.0118)  
    0.597(0.0235)  
    0.406(0.0160)  
    Rev. 4.0/Aug. 02  
    13  
    配单直通车
    HY57V161610DTC-8产品参数
    型号:HY57V161610DTC-8
    是否Rohs认证： 不符合
    生命周期：Obsolete
    IHS 制造商：SK HYNIX INC
    零件包装代码：TSOP2
    包装说明：TSOP2, TSOP50,.46,32
    针数：50
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    HTS代码：8542.32.00.02
    风险等级：5.41
    访问模式：DUAL BANK PAGE BURST
    最长访问时间：6 ns
    其他特性：AUTO/SELF REFRESH
    最大时钟频率 (fCLK)：125 MHz
    I/O 类型：COMMON
    交错的突发长度：1,2,4,8
    JESD-30 代码：R-PDSO-G50
    长度：20.968 mm
    内存密度：16777216 bit
    内存集成电路类型：SYNCHRONOUS DRAM
    内存宽度：16
    功能数量：1
    端口数量：1
    端子数量：50
    字数：1048576 words
    字数代码：1000000
    工作模式：SYNCHRONOUS
    最高工作温度：70 °C
    最低工作温度：
    组织：1MX16
    输出特性：3-STATE
    封装主体材料：PLASTIC/EPOXY
    封装代码：TSOP2
    封装等效代码：TSOP50,.46,32
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE, THIN PROFILE
    峰值回流温度（摄氏度）：NOT SPECIFIED
    电源：3.3 V
    认证状态：Not Qualified
    刷新周期：4096
    座面最大高度：1.2 mm
    自我刷新：YES
    连续突发长度：1,2,4,8,FP
    最大待机电流：0.001 A
    子类别：DRAMs
    最大压摆率：0.11 mA
    最大供电电压 (Vsup)：3.6 V
    最小供电电压 (Vsup)：3 V
    标称供电电压 (Vsup)：3.3 V
    表面贴装：YES
    技术：CMOS
    温度等级：COMMERCIAL
    端子形式：GULL WING
    端子节距：0.8 mm
    端子位置：DUAL
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    宽度：10.16 mm
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