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    • KSA1625L-TO92B-TG图

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    • 北京中其伟业科技有限公司

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    • KSA1625L
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    产品型号KSA1625L的Datasheet PDF文件预览

    KSA1625  
    High Voltage Switch  
    •
    •
    High Breakdown Voltage  
    High Speed Switching  
    TO-92  
    1. Emitter 2. Collector 3. Base  
    1
    PNP Silicon Transistor  
    Absolute Maximum Ratings T =25°C unless otherwise noted  
    a
    Symbol  
    Parameter  
    Ratings  
    -400  
    -400  
    -7  
    Units  
    V
    V
    V
    V
    Collector-Base Voltage  
    Collector-Emitter Voltage  
    Emitter-Base Voltage  
    Base Current  
    CBO  
    V
    CEO  
    EBO  
    V
    I
    I
    I
    -0.25  
    -0.5  
    A
    B
    Collector Current (DC)  
    Collector Current (Pulse)  
    A
    C
    -1.0  
    A
    CP  
    P
    P
    Collector Power Dissipation (T =25°C)  
    0.75  
    2
    W
    W
    °C  
    °C  
    C
    a
    Collector Power Dissipation (T =25°C)  
    C
    C
    T
    T
    Junction Temperature  
    Storage Temperature  
    150  
    J
    -55 ~ 150  
    STG  
    Electrical Characteristics T =25°C unless otherwise noted  
    a
    Symbol  
    Parameter  
    Collector-Emitter Breakdown Voltage  
    Collector Cut-off Current  
    Emitter Cut-off Current  
    Dc Current Gain  
    Test Condition  
    Min.  
    Max.  
    Units  
    BV  
    I = -1mA, I =0  
    -400  
    V
    CEO  
    CBO  
    EBO  
    C
    B
    I
    I
    V
    = -400V, I =0  
    -1  
    -1  
    µA  
    µA  
    CB  
    EB  
    CE  
    E
    V
    V
    = -5V, I =0  
    C
    h
    = -5V, I = -50mA  
    40  
    10  
    200  
    -1  
    FE  
    C
    V
    V
    (sat)  
    (sat)  
    Collector-Emitter Saturation Voltage  
    Base-Emitter Saturation Voltage  
    Current Gain Bandwidth Product  
    Output Capacitance  
    I = -100mA, I = -10mA  
    V
    V
    CE  
    C
    B
    I = -100mA, I = -10mA  
    -1.2  
    BE  
    C
    B
    f
    V
    = -10V, I = -10mA  
    MHz  
    pF  
    µs  
    T
    CE  
    CB  
    C
    C
    V
    = -10V, f=1MHz  
    25  
    1
    ob  
    t
    t
    t
    Turn On Time  
    I = -100mA, R =1.5kΩ  
    ON  
    C
    L
    I
    =- I = -10mA  
    Storage Time  
    B1  
    B2  
    5
    µs  
    STG  
    F
    V
    = -150V  
    CC  
    Fall Time  
    1
    µs  
    h
    Classification  
    FE  
    Classification  
    M
    L
    K
    h
    40 ~ 80  
    60 ~ 120  
    100 ~ 200  
    FE  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. A2, June 2002  
    Typical Characteristics  
    -0.5  
    -0.4  
    -0.3  
    -0.2  
    -0.1  
    1000  
    100  
    10  
    VCE= - 5V  
    IB=-140mA  
    IB=-120mA  
    IB=-100mA  
    IB=-80mA  
    IB=-60mA  
    IB=-40mA  
    IB=-20mA  
    1
    -0.1  
    -1  
    -10  
    -100  
    -1000  
    -0  
    -2  
    -4  
    -6  
    -8  
    -10  
    IC[mA], COLLECTOR CURRENT  
    VCE[V], COLLECTOR-EMITTER VOLTAGE  
    Figure 1. Static Characteristic  
    Figure 2. DC current Gain  
    -10  
    1000  
    100  
    10  
    IC= - 10 IB  
    f=1.0MHz  
    -1  
    VBE(sat)  
    VCE(sat)  
    -0.1  
    -0.01  
    -0.1  
    1
    -0.1  
    -1  
    -10  
    -100  
    -1000  
    -1  
    -10  
    -100  
    -1000  
    IC[mA], COLLECTOR CURRENT  
    VCB[V], COLLECTOR-BASE VOLTAGE  
    Figure 3. Collector-Emitter Saturation Voltage  
    Base-Emitter Saturation Voltage  
    Figure 4. Collector Output Capacitance  
    1000  
    -10  
    VCE = -10V  
    Ta=25oC  
    Single Pulse  
    ICMAX(Pulse)  
    -1  
    100  
    10  
    1
    DC  
    -0.1  
    -0.01  
    -0.001  
    -1  
    -10  
    -100  
    -1000  
    -1  
    -10  
    -100  
    -1000  
    IC[mA], COLLECTOR CURRENT  
    VCE[V], COLLECTOR-EMITTER VOLTAGE  
    Figure 5. Current Gain Bandwidth Product  
    Figure 6. Safe Operating Area  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. A2, June 2002  
    Package Demensions  
    TO-92  
    +0.25  
    –0.15  
    4.58  
    0.46 ±0.10  
    +0.10  
    –0.05  
    1.27TYP  
    1.27TYP  
    0.38  
    [1.27 ±0.20  
    ]
    [1.27 ±0.20]  
    3.60 ±0.20  
    (R2.29)  
    Dimensions in Millimeters  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. A2, June 2002  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
    intended to be an exhaustive list of all such trademarks.  
    OPTOLOGIC®  
    OPTOPLANAR™  
    PACMAN™  
    VCX™  
    ACEx™  
    FASTr™  
    FRFET™  
    GlobalOptoisolator™  
    GTO™  
    SMART START™  
    SPM™  
    Stealth™  
    Bottomless™  
    CoolFET™  
    CROSSVOLT™  
    DOME™  
    EcoSPARK™  
    E2CMOS™  
    EnSigna™  
    FACT™  
    POP™  
    SuperSOT™-3  
    SuperSOT™-6  
    SuperSOT™-8  
    SyncFET™  
    TinyLogic™  
    TruTranslation™  
    UHC™  
    HiSeC™  
    Power247™  
    I2C™  
    PowerTrench®  
    QFET™  
    ISOPLANAR™  
    LittleFET™  
    MicroFET™  
    QS™  
    QT Optoelectronics™  
    Quiet Series™  
    SLIENT SWITCHER®  
    FACT Quiet series™ MicroPak™  
    FAST®  
    MICROWIRE™  
    UltraFET®  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
    PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
    LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
    NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
    CORPORATION.  
    As used herein:  
    1. Life support devices or systems are devices or systems  
    which, (a) are intended for surgical implant into the body,  
    or (b) support or sustain life, or (c) whose failure to perform  
    when properly used in accordance with instructions for use  
    provided in the labeling, can be reasonably expected to  
    result in significant injury to the user.  
    2. A critical component is any component of a life support  
    device or system whose failure to perform can be  
    reasonably expected to cause the failure of the life support  
    device or system, or to affect its safety or effectiveness.  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or In  
    Design  
    This datasheet contains the design specifications for  
    product development. Specifications may change in  
    any manner without notice.  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later date.  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    design.  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specifications. Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve design.  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductor.  
    The datasheet is printed for reference information only.  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. H7  
    配单直通车
    KSA1625L产品参数
    型号:KSA1625L
    是否Rohs认证： 不符合
    生命周期：Obsolete
    零件包装代码：TO-92
    包装说明：CYLINDRICAL, O-PBCY-T3
    针数：3
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    HTS代码：8541.21.00.95
    风险等级：5.83
    最大集电极电流 (IC)：0.5 A
    集电极-发射极最大电压：400 V
    配置：SINGLE
    最小直流电流增益 (hFE)：60
    JEDEC-95代码：TO-92
    JESD-30 代码：O-PBCY-T3
    JESD-609代码：e0
    元件数量：1
    端子数量：3
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：ROUND
    封装形式：CYLINDRICAL
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：PNP
    最大功率耗散 (Abs)：2 W
    认证状态：Not Qualified
    子类别：Other Transistors
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    端子形式：THROUGH-HOLE
    端子位置：BOTTOM
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：10 MHz
    最大关闭时间（toff）：6000 ns
    最大开启时间（吨）：1000 ns
    Base Number Matches：1
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