欢迎访问ic37.com |
会员登录 免费注册
会员中心
企业资讯   人才招聘  
电子百科

电子百科

Datasheet下载 IC品牌 缩略语 技术文章 IC型号

产品导航

ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789
产品
  • 产品
  • PDF

    • 最近搜索

    热门搜索

    搜索
    发布采购
    所在地： 型号： 精确
    • 批量询价
    •  
    • 供应商
    • 型号
    • 数量
    • 厂商
    • 封装
    • 批号
    • 交易说明
    • 询价
    更多
    • KSA1884图

    • 首天国际（深圳）集团有限公司

       该会员已使用本站17年以上
    • KSA1884
    • 数量5000 
    • 厂家原厂 
    • 封装原厂封装 
    • 批号2024+ 
    • 百分百原装正品，现货库存
    • QQ:528164397QQ：528164397 复制
      QQ:1318502189QQ：1318502189 复制
    • 0755-82807088 QQ:528164397QQ:1318502189
    • KSA1884图

    • 北京齐天芯科技有限公司

       该会员已使用本站15年以上
    • KSA1884
    • 数量5000 
    • 厂家原厂 
    • 封装原厂封装 
    • 批号2024+ 
    • 原装正品，假一罚十
    • QQ:2880824479QQ：2880824479 复制
      QQ:1344056792QQ：1344056792 复制
    • 010-62104931 QQ:2880824479QQ:1344056792

    产品型号KSA1943的Datasheet PDF文件预览

    KSA1943  
    Audio Power Amplifier  
    •
    •
    •
    •
    High Current Capability I = -13A  
    High Power Dissipation  
    Wide S.O.A  
    C
    Complement to KSC5200  
    TO-264  
    1.Base 2.Collector 3.Emitter  
    1
    PNP Epitaxial Silicon Transistor  
    Absolute Maximum Ratings T =25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Ratings  
    -230  
    Units  
    V
    V
    V
    Collector-Base Voltage  
    Collector-Emitter Voltage  
    Emitter-Base Voltage  
    Collector Current  
    V
    V
    CBO  
    -230  
    CEO  
    EBO  
    -5  
    V
    I
    I
    -13  
    A
    C
    Base Current  
    -1.5  
    A
    B
    P
    Collector Dissipation (T =25°C)  
    130  
    W
    °C  
    °C  
    C
    C
    T
    T
    Junction Temperature  
    Storage Temperature  
    150  
    J
    - 50 ~ 150  
    STG  
    Electrical CharacteristicsT =25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Collector-Base Breakdown Voltage  
    Collector-Emitter Breakdown Voltage  
    Emitter-Base Breakdown Voltage  
    Collector Cut-off Current  
    Test Condition  
    I =-5mA, I =0  
    Min.  
    Typ.  
    Max.  
    Units  
    BV  
    -230  
    -230  
    -5  
    V
    V
    CBO  
    CEO  
    EBO  
    C
    E
    BV  
    BV  
    I =-10mA, R =∞  
    C BE  
    I =-5mA, I =0  
    V
    E
    C
    I
    I
    V
    =-230V, I =0  
    -5.0  
    -5.0  
    160  
    µA  
    µA  
    CBO  
    EBO  
    CB  
    EB  
    CE  
    CE  
    E
    Emitter Cut-off Current  
    V
    V
    V
    =-5V, I =0  
    C
    h
    h
    * DC Current Gain  
    =-5V, I =-1A  
    55  
    35  
    FE1  
    FE2  
    C
    DC Current Gain  
    =-5V, I =-7A  
    60  
    -0.4  
    -1.0  
    30  
    C
    V
    V
    (sat)  
    (on)  
    Collector-Emitter Saturation Voltage  
    Base-Emitter ON Voltage  
    Current Gain Bandwidth Product  
    Output Capacitance  
    I =-8A, I =-0.8A  
    -3.0  
    -1.5  
    V
    V
    CE  
    C
    B
    V
    =-5V, I =-7A  
    C
    BE  
    CE  
    CE  
    CB  
    f
    V
    V
    =-5V, I =-1A  
    MHz  
    pF  
    T
    C
    C
    =-10V, f=1MHz  
    360  
    ob  
    * Pulse Test : PW=20us  
    *h Classification  
    FE  
    Classification  
    R
    O
    h
    55 ~ 110  
    80 ~ 160  
    FE1  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. B1, Septmeber 2001  
    Typical Characteristics  
    -20  
    IB = -900mA  
    IB = -800mA  
    IB = -1A  
    -18  
    -16  
    -14  
    -12  
    IB = -700mA  
    VCE = -5V  
    100  
    10  
    1
    IB = -300mA  
    IB = -200mA  
    -10  
    -8  
    IB = -100mA  
    -6  
    -4  
    -2  
    -0  
    -2  
    -4  
    -6  
    -8  
    -10  
    0.1  
    1
    10  
    VCE[V], COLLECTOR-EMITTER VOLTAGE  
    IC[A], COLLECTOR CURRENT  
    Figure 1. Static Characteristic  
    Figure 2. DC current Gain  
    10  
    14  
    IC = 10 IB  
    12  
    10  
    8
    VCE = 5V  
    1
    0.1  
    6
    4
    0.01  
    1E-3  
    2
    0
    0.0  
    0.01  
    0.1  
    1
    10  
    0.2  
    0.4  
    0.6  
    0.8  
    1.0  
    1.2  
    1.4  
    1.6  
    1.8  
    2.0  
    2.2  
    2.4  
    VBE[V], BASE-EMITTER VOLTAGE  
    IC[A], COLLECTOR CURRENT  
    Figure 3. Collector-Emitter Saturation Voltage  
    Figure 4. Collector-Emitter Saturation Voltage  
    -100  
    160  
    140  
    120  
    100  
    80  
    IC MAX. (Pulsed*)  
    10ms*  
    -10  
    IC MAX. (DC)  
    100ms*  
    DC  
    -1  
    60  
    40  
    -0.1  
    *SINGLE NONREPETITIVE  
    PULSE TC=25[oC]  
    20  
    0
    -0.01  
    0
    25  
    50  
    75  
    100  
    125  
    150  
    175  
    1
    10  
    100  
    TC[oC], CASE TEMPERATURE  
    VCE [V], COLLECTOR-EMITTER VOLTAGE  
    Figure 5. Safe Operating Area  
    Figure 6. Power Derating  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. B1, Septmeber 2001  
    Package Demensions  
    TO-264  
    20.00 ±0.20  
    (2.00)  
    (8.30)  
    (8.30)  
    (1.00)  
    (R2.00)  
    (0.50)  
    ø3.30  
    ±
    0.20  
    (R1.00)  
    (7.00)  
    (7.00)  
    4.90 ±0.20  
    (1.50)  
    (1.50)  
    (1.50)  
    2.50 ±0.20  
    3.00 ±0.20  
    +0.25  
    –0.10  
    1.00  
    +0.25  
    –0.10  
    0.60  
    2.80 ±0.30  
    5.45TYP  
    5.45TYP  
    [5.45 ±0.30  
    ]
    [5.45 ±0.30]  
    Dimensions in Millimeters  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. B1, Septmeber 2001  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
    intended to be an exhaustive list of all such trademarks.  
    ACEx™  
    Bottomless™  
    CoolFET™  
    FAST®  
    FASTr™  
    FRFET™  
    OPTOLOGIC™  
    OPTOPLANAR™  
    PACMAN™  
    SMART START™  
    STAR*POWER™  
    Stealth™  
    VCX™  
    CROSSVOLT™  
    DenseTrench™  
    DOME™  
    EcoSPARK™  
    E2CMOS™  
    EnSigna™  
    GlobalOptoisolator™  
    GTO™  
    HiSeC™  
    ISOPLANAR™  
    LittleFET™  
    MicroFET™  
    MicroPak™  
    MICROWIRE™  
    POP™  
    SuperSOT™-3  
    SuperSOT™-6  
    SuperSOT™-8  
    SyncFET™  
    TruTranslation™  
    TinyLogic™  
    Power247™  
    PowerTrench®  
    QFET™  
    QS™  
    QT Optoelectronics™  
    Quiet Series™  
    SLIENT SWITCHER®  
    FACT™  
    FACT Quiet Series™  
    UHC™  
    UltraFET®  
    STAR*POWER is used under license  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
    PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
    LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
    NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
    CORPORATION.  
    As used herein:  
    1. Life support devices or systems are devices or systems  
    which, (a) are intended for surgical implant into the body,  
    or (b) support or sustain life, or (c) whose failure to perform  
    when properly used in accordance with instructions for use  
    provided in the labeling, can be reasonably expected to  
    result in significant injury to the user.  
    2. A critical component is any component of a life support  
    device or system whose failure to perform can be  
    reasonably expected to cause the failure of the life support  
    device or system, or to affect its safety or effectiveness.  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or In  
    Design  
    This datasheet contains the design specifications for  
    product development. Specifications may change in  
    any manner without notice.  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later date.  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    design.  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specifications. Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve design.  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductor.  
    The datasheet is printed for reference information only.  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. H4  
    配单直通车
    KSA1943O产品参数
    型号:KSA1943O
    是否Rohs认证： 不符合
    生命周期：Obsolete
    零件包装代码：TO-264
    包装说明：TO-264, 3 PIN
    针数：3
    Reach Compliance Code：compliant
    ECCN代码：EAR99
    风险等级：5.78
    最大集电极电流 (IC)：13 A
    集电极-发射极最大电压：230 V
    配置：SINGLE
    最小直流电流增益 (hFE)：80
    JEDEC-95代码：TO-264AA
    JESD-30 代码：R-PSFM-T3
    JESD-609代码：e0
    元件数量：1
    端子数量：3
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    极性/信道类型：PNP
    最大功率耗散 (Abs)：150 W
    认证状态：Not Qualified
    子类别：Other Transistors
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    端子形式：THROUGH-HOLE
    端子位置：SINGLE
    晶体管应用：AMPLIFIER
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：30 MHz
    Base Number Matches：1
    •  
    • 供货商
    • 型号 *
    • 数量*
    • 厂商
    • 封装
    • 批号
    • 交易说明
    • 询价
  • 免费注册 忘记密码
    • 批量询价选中的记录已选中0条,每次最多15条。

    IC37:专业IC行业平台

    专业IC领域供求交易平台:提供全面的IC Datasheet资料和资讯，Datasheet 1000万数据，IC品牌1000多家。

    网站导航 Datasheet资料库 电子术语 电子百科
    服务中心 常见问题 委托交易 会员服务
    关于我们 公司简介 联系我们 免责申明

    产品索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

    深圳网络警察报警平台 公共信息安全网络监察 经营性网站备案信息 不良信息举报中心 工商网监电子标识 全国公安机关备案
    服务电话： 0755-32882616 0755-32882606 0755-32882608 0755-32882607 值班和投诉电话：13715251531 ©2004-2024 IC37网 版权所有：ic37.com 版权申明 公网安备44030402000606 粤ICP备13051289号-6
     复制成功！