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产品型号KSA1962的Datasheet PDF文件预览

KSA1962

Audio Power Amplifier

•

High Current Capability : I = 15A

High Collector-Emitter Breakdown Voltage : BV

High Power Dissipation

Wide S.O.A

Complement to KSC5242

=230V (Min.)

CEO

TO-3P

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

-230

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Base Current

CBO

-230

CEO

EBO

-5

-10

-1.5

Collector Dissipation (T =25°C)

100

°C

Junction Temperature

Storage Temperature

150

- 50 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I =-5mA, I =0

-230

-5

CBO

CEO

EBO

I =-10mA, R =∞

C BE

I =-5mA, I =0

=-230V, I =0

-5.0

160

µA

CBO

EBO

Emitter Cut-off Current

=-5V, I =0

* DC Current Gain

=-5V, I =-1A

FE1

FE2

DC Current Gain

=-5V, I =-7A

-0.4

-1.0

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I =-8A, I =-0.8A

-3.0

-1.5

=-5V, I =-7A

=-5V, I =-1A

MHz

=-10V, f=1MHz

360

* Pulse Test : PW=20us

* h Classification

Classification

55 ~ 110

80 ~ 160

FE1

Rev. B, November 2000

Typical Characteristics

-20

I_B= -900mA

I_B= -800mA

I_B= -1A

-18

-16

-14

-12

I_B= -700mA

V_CE= -5V

100

I_B= -300mA

I_B= -200mA

-10

-8

I_B= -100mA

-6

-4

-2

-0

-2

-4

-6

-8

-10

0.1

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

I_C= 10 I_B

V_CE= 5V

0.1

0.01

1E-3

0.0

0.01

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

I_C[A], COLLECTOR CURRENT

V_BE[V], BASE-EMITTER VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

-100

160

I_CMAX. (Pulsed*)

140

120

100

10ms*

-10

I_CMAX. (DC)

100ms*

-1

-0.1

*SINGLE NONREPETITIVE

PULSE T_C=25[^oC]

-0.01

-1

-10

-100

100

125

150

175

V_CE[V], COLLECTOR-EMITTER VOLTAGE

T_C[^oC], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

Rev. B, November 2000

Package Demensions

TO-3P

15.60 ±0.20

4.80 ±0.20

13.60 ±0.20

9.60 ±0.20

+0.15

ø3.20 ±0.10

1.50

–0.05

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

1.40 ±0.20

+0.15

–0.05

0.60

5.45TYP

[5.45 ±0.30

]

[5.45 ±0.30]

Dimensions in Millimeters

Rev. B, November 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

型号:	KSA1962
生命周期：	Obsolete
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	TO-3P
包装说明：	TO-3P, 3 PIN
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.84
Is Samacsys：	N
最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	230 V
配置：	SINGLE
最小直流电流增益 (hFE)：	35
JESD-30 代码：	R-PSFM-T3
元件数量：	1
端子数量：	3
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	PNP
认证状态：	Not Qualified
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	30 MHz
Base Number Matches：	1

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