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    产品型号KSB817O的Datasheet PDF文件预览

    KSB817  
    Audio Power Amplifier  
    Car Booster Output Amplifier  
    DC to DC Converter  
    •
    •
    •
    High Current Capability  
    High Power Dissipation  
    Complementary to KSD1047  
    TO-3P  
    1.Base 2.Collector 3.Emitter  
    1
    PNP Planar Silicon Transistor  
    Absolute Maximum Ratings T =25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Value  
    - 160  
    - 140  
    - 6  
    Units  
    V
    V
    Collector-Base Voltage  
    Collector-Emitter Voltage  
    Emitter-Base Voltage  
    Collector Current (DC)  
    V
    V
    CBO  
    CEO  
    EBO  
    V
    V
    I
    I
    - 8  
    A
    C
    *Collector Current (Pulse)  
    - 16  
    A
    CP  
    P
    T
    T
    Collector Dissipation (T =25°C)  
    80  
    W
    °C  
    °C  
    C
    C
    Junction Temperature  
    Storage Temperature  
    150  
    J
    - 40 ~ 150  
    STG  
    Electrical Characteristics T =25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Test Condition  
    Min.  
    - 160  
    - 140  
    -6  
    Typ.  
    Max.  
    Units  
    BV  
    BV  
    BV  
    Collector-Base Breakdown Voltage  
    Collector-Emitter Breakdown Voltage  
    Emitter-Base Breakdown Voltage  
    Collector Cut-off Current  
    I
    I
    I
    = - 5mA, I = 0  
    V
    V
    CBO  
    CEO  
    EBO  
    C
    C
    E
    E
    = - 10mA, I = 0  
    B
    = - 5mA, I = 0  
    V
    C
    I
    I
    V
    V
    = - 80V, I = 0  
    - 0.1  
    - 0.1  
    200  
    mA  
    mA  
    CBO  
    EBO  
    CB  
    BE  
    E
    Emitter Cut-off Current  
    = - 4V, I = 0  
    C
    h
    h
    * DC Current Gain  
    V
    V
    = - 5V, I = - 1A  
    60  
    20  
    FE1  
    FE2  
    CE  
    CE  
    C
    = - 5V, I = - 6A  
    C
    V
    V
    (sat)  
    (on)  
    Collector-Emitter Saturation Voltage  
    Base-Emitter ON Voltage  
    Current Gain Bandwidth Product  
    Output Capacitance  
    Turn ON Time  
    I
    = - 5A, I = - 0.5A  
    - 2.5  
    - 1.5  
    V
    V
    CE  
    C
    B
    V
    V
    V
    V
    = - 5V, I = - 1A  
    C
    BE  
    CE  
    CE  
    CB  
    CC  
    f
    = - 5V, I = - 1A  
    15  
    300  
    0.25  
    0.53  
    1.61  
    MHz  
    pF  
    µs  
    T
    C
    C
    = - 10V, f = 1MHz  
    = 20V  
    ob  
    ON  
    F
    t
    t
    I
    = 1A = 10·I = - 10·I  
    Fall Time  
    C
    B1 B2  
    µs  
    R = 20Ω  
    L
    t
    Storage Time  
    µs  
    STG  
    * Pulse Test: PW = 20µs  
    h
    Classificntion  
    FE  
    Classification  
    O
    Y
    h
    60 ~ 120  
    100 ~ 200  
    FE1  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. B1, June 2001  
    Typical Characteristics  
    -10  
    1000  
    100  
    10  
    -9  
    VCE=-5V  
    IB=-240mA  
    IB=-200mA  
    IB=-160mA  
    IB=-120mA  
    -8  
    -7  
    -6  
    -5  
    -4  
    -3  
    -2  
    -1  
    -0  
    IB=-80mA  
    IB=-40mA  
    IB=-20mA  
    1
    -0.1  
    -0  
    -5  
    -10  
    -15  
    -20  
    -25  
    -30  
    -35  
    -40  
    -45  
    -50  
    -1  
    -10  
    -100  
    VCE(V),COLLECTOR EMITTER VOLTAGE  
    IC(A) COLLECTOR CURRENT  
    Figure 1. Static Characteristic  
    Figure 2. DC current Gain  
    -10  
    -10  
    IC=10IB  
    IC=10IB  
    -1  
    -1  
    -0.1  
    -0.01  
    -0.1  
    -0.1  
    -0.1  
    -1  
    -10  
    -1  
    -10  
    IC(A) COLLECTOR CURRENT  
    IC(A) COLLECTOR CURRENT  
    Figure 3. Collector-Emitter Saturation Voltage  
    Figure 4. Base-Emitter Saturation Voltage  
    -8  
    1000  
    VCE=-5V  
    -7  
    f=1MHz  
    -6  
    -5  
    -4  
    -3  
    -2  
    -1  
    -0  
    100  
    10  
    -0.0  
    -0.2  
    -0.4  
    -0.6  
    -0.8  
    -1.0  
    -1.2  
    -1.4  
    -1.6  
    -1  
    -10  
    -100  
    VBE(V), BASE EMITTER VOLTAGE  
    VCB(V) COLLECTOR BASE VOLTAGE  
    Figure 5. Base-Emitter On Voltage  
    Figure 6. Collector Output Capacitance  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. B1, June 2001  
    Typical Characteristics (Continued)  
    -100  
    -10  
    -100  
    VCE=-5V  
    IC MAX. (Pulse)  
    IC MAX. (DC)  
    -10  
    -1  
    -0.1  
    -0.01  
    *SINGLE NONREPETITIVE  
    PULSE TC=25[oC]  
    -1  
    -0.1  
    -1  
    -10  
    -0.1  
    -1  
    -10  
    -100  
    IC(A) COLLECTOR CURRENT  
    VCE[V], COLLECTOR-EMITTER VOLTAGE  
    Figure 7. Current Gain Bandwidth Product  
    Figure 8. Safe Operating Area  
    140  
    120  
    100  
    80  
    60  
    40  
    20  
    0
    0
    25  
    50  
    75  
    100  
    125  
    150  
    175  
    TC[oC], CASE TEMPERATURE  
    Figure 9. Current Gain Bandwidth Product  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. B1, June 2001  
    Package Demensions  
    TO-3P  
    15.60 ±0.20  
    4.80 ±0.20  
    13.60 ±0.20  
    9.60 ±0.20  
    +0.15  
    ø3.20 ±0.10  
    1.50  
    –0.05  
    2.00 ±0.20  
    3.00 ±0.20  
    1.00 ±0.20  
    1.40 ±0.20  
    +0.15  
    –0.05  
    0.60  
    5.45TYP  
    5.45TYP  
    [5.45 ±0.30  
    ]
    [5.45 ±0.30]  
    Dimensions in Millimeters  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. B1, June 2001  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
    intended to be an exhaustive list of all such trademarks.  
    FAST®  
    FASTr™  
    FRFET™  
    GlobalOptoisolator™  
    GTO™  
    OPTOPLANAR™  
    PACMAN™  
    POP™  
    STAR*POWER™  
    Stealth™  
    ACEx™  
    Bottomless™  
    CoolFET™  
    CROSSVOLT™  
    DenseTrench™  
    DOME™  
    EcoSPARK™  
    E2CMOS™  
    EnSigna™  
    SuperSOT™-3  
    SuperSOT™-6  
    SuperSOT™-8  
    SyncFET™  
    TruTranslation™  
    TinyLogic™  
    UHC™  
    Power247™  
    PowerTrench®  
    QFET™  
    HiSeC™  
    ISOPLANAR™  
    LittleFET™  
    MicroFET™  
    MICROWIRE™  
    OPTOLOGIC™  
    QS™  
    QT Optoelectronics™  
    Quiet Series™  
    SLIENT SWITCHER®  
    SMART START™  
    UltraFET®  
    VCX™  
    FACT™  
    FACT Quiet Series™  
    STAR*POWER is used under license  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
    PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
    LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
    NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
    CORPORATION.  
    As used herein:  
    1. Life support devices or systems are devices or systems  
    which, (a) are intended for surgical implant into the body,  
    or (b) support or sustain life, or (c) whose failure to perform  
    when properly used in accordance with instructions for use  
    provided in the labeling, can be reasonably expected to  
    result in significant injury to the user.  
    2. A critical component is any component of a life support  
    device or system whose failure to perform can be  
    reasonably expected to cause the failure of the life support  
    device or system, or to affect its safety or effectiveness.  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or In  
    Design  
    This datasheet contains the design specifications for  
    product development. Specifications may change in  
    any manner without notice.  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later date.  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    design.  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specifications. Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve design.  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductor.  
    The datasheet is printed for reference information only.  
    ©2001 Fairchild Semiconductor Corporation  
    Rev. H3  
    Product Folder - Fairchild P/N KSB817 - PNP Planar Silicon Transistor  
    SEARCH | Parametric | Cross Reference  
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    PNP Planar Silicon Transistor  
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    ●
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    High Current Capability  
    High Power Dissipation  
    Complementary to KSD1047  
    Dotted line  
    Quality and reliability  
    This page  
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    Applications  
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    Audio Power Amplifier  
    Car Booster Output Amplifier  
    DC to DC Converter  
    technical support  
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    Product  
    Product status  
    Lifetime Buy  
    Pricing*  
    $0.93  
    Package type  
    Leads  
    Packing method  
    KSB817YTU  
    TO-3P  
    3
    RAIL  
    * 1,000 piece Budgetary Pricing  
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