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    产品型号KSC838CO的Datasheet PDF文件预览

    KSC838  
    FM Radio RF AMP, MIX, CONV, OSC, IF AMP  
    •
    •
    High Current Gain Bandwidth Product : f =250MHz (TYP)  
    Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
    T
    TO-92  
    1. Emitter 2. Base 3. Collector  
    1
    NPN Epitaxial Silicon Transistor  
    Absolute Maximum Ratings T =25°C unless otherwise noted  
    a
    Symbol  
    Parameter  
    Value  
    35  
    Units  
    V
    V
    V
    V
    Collector-Base Voltage  
    Collector-Emitter Voltage  
    Emitter-Base Voltage  
    Collector Current  
    CBO  
    30  
    V
    CEO  
    EBO  
    4
    V
    I
    30  
    mA  
    mW  
    °C  
    C
    P
    Collector Power Dissipation  
    Junction Temperature  
    Storage Temperature  
    250  
    C
    T
    T
    150  
    J
    -55 ~ 150  
    °C  
    STG  
    Electrical Characteristics T =25°C unless otherwise noted  
    a
    Symbol  
    Parameter  
    Test Condition  
    Min.  
    35  
    30  
    4
    Typ.  
    Max.  
    Units  
    BV  
    Collector-Base Breakdown Voltage  
    Collector-Emitter Breakdown Voltage  
    Emitter-Base Breakdown Voltage  
    Collector Cut-off Current  
    I =100µA, I =0  
    V
    V
    CBO  
    CEO  
    EBO  
    C
    E
    BV  
    BV  
    I =5mA, I =0  
    C B  
    I =10µA, I =0  
    V
    E
    C
    I
    I
    V
    =30V, I =0  
    0.1  
    0.1  
    µA  
    µA  
    CBO  
    EBO  
    CB  
    EB  
    CE  
    CE  
    E
    Emitter Cut-off Current  
    V
    V
    V
    =4V, I =0  
    C
    h
    DC Current Gain  
    =12V, I =2mA  
    40  
    240  
    0.75  
    0.4  
    FE  
    C
    V
    V
    (on)  
    Base-Emitter On Voltage  
    =6V, I =1mA  
    0.65  
    0.70  
    0.1  
    V
    V
    BE  
    C
    (sat)  
    Collector-Emitter Saturation Voltage  
    Current Gain Bandwidth Product  
    Output Capacitance  
    I =10mA, I =1mA  
    C B  
    CE  
    f
    V
    =10V, I =1mA  
    100  
    250  
    2.0  
    MHz  
    pF  
    T
    CE  
    CB  
    C
    C
    V
    =10V, I =0, f=1MHz  
    3.2  
    ob  
    E
    h
    Classification  
    FE  
    Classification  
    R
    O
    Y
    h
    40 ~ 80  
    70 ~ 140  
    120 ~ 240  
    FE  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. A2, September 2002  
    Typical Characteristics  
    10  
    9
    8
    7
    6
    5
    4
    3
    2
    1
    0
    1000  
    100  
    10  
    IB = 90µA  
    IB = 80µA  
    VCE=12V  
    IB = 70µA  
    IB = 60µA  
    IB = 50µA  
    IB = 40µA  
    IB = 30µA  
    IB = 20µA  
    IB = 10µA  
    0.1  
    1
    10  
    100  
    0
    1
    2
    3
    4
    5
    6
    7
    8
    9
    10  
    VCE[V], COLLECTOR-EMITTER VOLTAGE  
    IC[mA], COLLECTOR CURRENT  
    Figure 1. Static Characteristic  
    Figure 2. DC current Gain  
    32  
    28  
    24  
    20  
    16  
    12  
    8
    10  
    IC=10IB  
    VCE=12V  
    1
    VBE(sat)  
    0.1  
    VCE(sat)  
    4
    0
    0.0  
    0.01  
    0.1  
    0.2  
    0.4  
    0.6  
    0.8  
    1.0  
    1.2  
    1
    10  
    IC[mA], COLLECTOR CURRENT  
    VBE[V], BASE-EMITTER VOLTAGE  
    Figure 3. Base-Emitter Saturation Voltage  
    Collector-Emitter Saturation Voltage  
    Figure 4. Base-Emitter On Voltage  
    10  
    1000  
    100  
    10  
    f = 1MHz  
    IE=0  
    VCE=10V  
    1
    1
    10  
    1
    10  
    100  
    IC[mA], COLLECTOR CURRENT  
    VCB[V], COLLECTOR-BASE VOLTAGE  
    Figure 5. Collector Output Capacitance  
    Figure 6. Current Gain Bandwidth Product  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. A2, September 2002  
    Package Dimensions  
    TO-92  
    +0.25  
    –0.15  
    4.58  
    0.46 ±0.10  
    +0.10  
    –0.05  
    1.27TYP  
    1.27TYP  
    0.38  
    [1.27 ±0.20  
    ]
    [1.27 ±0.20]  
    3.60 ±0.20  
    (R2.29)  
    Dimensions in Millimeters  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. A2, September 2002  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
    intended to be an exhaustive list of all such trademarks.  
    ACEx™  
    FACT™  
    ImpliedDisconnect™ PACMAN™  
    SPM™  
    ActiveArray™  
    Bottomless™  
    CoolFET™  
    CROSSVOLT™ FRFET™  
    DOME™  
    FACT Quiet series™ ISOPLANAR™  
    POP™  
    Stealth™  
    FAST®  
    LittleFET™  
    MicroFET™  
    MicroPak™  
    Power247™  
    PowerTrench®  
    QFET™  
    SuperSOT™-3  
    SuperSOT™-6  
    SuperSOT™-8  
    SyncFET™  
    FASTr™  
    GlobalOptoisolator™ MICROWIRE™  
    QS™  
    EcoSPARK™  
    E2CMOS™  
    EnSigna™  
    Across the board. Around the world.™  
    The Power Franchise™  
    GTO™  
    HiSeC™  
    I2C™  
    MSX™  
    MSXPro™  
    OCX™  
    OCXPro™  
    OPTOLOGIC®  
    OPTOPLANAR™  
    QT Optoelectronics™ TinyLogic™  
    Quiet Series™  
    TruTranslation™  
    RapidConfigure™  
    RapidConnect™  
    UHC™  
    UltraFET®  
    SILENT SWITCHER® VCX™  
    SMART START™  
    Programmable Active Droop™  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
    PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
    LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
    NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
    CORPORATION.  
    As used herein:  
    1. Life support devices or systems are devices or systems  
    which, (a) are intended for surgical implant into the body,  
    or (b) support or sustain life, or (c) whose failure to perform  
    when properly used in accordance with instructions for use  
    provided in the labeling, can be reasonably expected to  
    result in significant injury to the user.  
    2. A critical component is any component of a life support  
    device or system whose failure to perform can be  
    reasonably expected to cause the failure of the life support  
    device or system, or to affect its safety or effectiveness.  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or In  
    Design  
    This datasheet contains the design specifications for  
    product development. Specifications may change in  
    any manner without notice.  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later date.  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    design.  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specifications. Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve design.  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductor.  
    The datasheet is printed for reference information only.  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. I1  
    配单直通车
    KSC838CO产品参数
    型号:KSC838CO
    是否Rohs认证：不符合
    生命周期：Obsolete
    IHS 制造商：FAIRCHILD SEMICONDUCTOR CORP
    Reach Compliance Code：compliant
    ECCN代码：EAR99
    HTS代码：8541.21.00.75
    风险等级：5.81
    Is Samacsys：N
    最大集电极电流 (IC)：0.03 A
    集电极-发射极最大电压：30 V
    配置：SINGLE
    最小直流电流增益 (hFE)：70
    JEDEC-95代码：TO-92
    JESD-30 代码：O-PBCY-T3
    JESD-609代码：e0
    元件数量：1
    端子数量：3
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：ROUND
    封装形式：CYLINDRICAL
    极性/信道类型：NPN
    最大功率耗散 (Abs)：0.25 W
    认证状态：Not Qualified
    子类别：Other Transistors
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    端子形式：THROUGH-HOLE
    端子位置：BOTTOM
    晶体管应用：AMPLIFIER
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：250 MHz
    Base Number Matches：1
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